Photovoltage improvements in Cz-Si by low-energy implantation of carbon ions
We demonstrate photovoltage improvements in Czochralski-grown silicon wafers by low-energy implantation of carbon ions. After annealing at temperatures above 550 °C the surface photovoltage (SPV) increases in both implanted and unimplanted sample sets. The increase in the SPV signal observed in impl...
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| Vydané v: | Materials Research Express Ročník 3; číslo 5; s. 55017 |
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| Hlavní autori: | , , , , |
| Médium: | Journal Article |
| Jazyk: | English |
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IOP Publishing
01.05.2016
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| ISSN: | 2053-1591, 2053-1591 |
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| Abstract | We demonstrate photovoltage improvements in Czochralski-grown silicon wafers by low-energy implantation of carbon ions. After annealing at temperatures above 550 °C the surface photovoltage (SPV) increases in both implanted and unimplanted sample sets. The increase in the SPV signal observed in implanted samples, which are subsequently annealed at 650 °C and 750 °C, is roughly two times greater than the appropriate values observed in unimplanted wafers. The effect in implanted samples is accompanied by longer time decays in the SPV transients (roughly from several to hundreds of microseconds). In marked contrast, unimplanted samples do not show such a significant difference in the decay times upon annealing. The decay times are fairly evenly distributed across the surface of the implanted but unannealed wafer, whereas the surface distribution function is essentially non-uniform in annealed samples. The results are discussed in terms of the temperature specific defect chemistry. The results of this work open new possibilities for studying defect rearrangement and clustering of atoms in implanted Si and advancing the development of silicon based photovoltaic materials with high photovoltage response. Supplementary data are available from stacks.iop.org/SST/. |
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| AbstractList | We demonstrate photovoltage improvements in Czochralski-grown silicon wafers by low-energy implantation of carbon ions. After annealing at temperatures above 550 °C the surface photovoltage (SPV) increases in both implanted and unimplanted sample sets. The increase in the SPV signal observed in implanted samples, which are subsequently annealed at 650 °C and 750 °C, is roughly two times greater than the appropriate values observed in unimplanted wafers. The effect in implanted samples is accompanied by longer time decays in the SPV transients (roughly from several to hundreds of microseconds). In marked contrast, unimplanted samples do not show such a significant difference in the decay times upon annealing. The decay times are fairly evenly distributed across the surface of the implanted but unannealed wafer, whereas the surface distribution function is essentially non-uniform in annealed samples. The results are discussed in terms of the temperature specific defect chemistry. The results of this work open new possibilities for studying defect rearrangement and clustering of atoms in implanted Si and advancing the development of silicon based photovoltaic materials with high photovoltage response. Supplementary data are available from stacks.iop.org/SST/. We demonstrate photovoltage improvements in Czochralski-grown silicon wafers by low-energy implantation of carbon ions. After annealing at temperatures above [approximate]550 [degrees]C the surface photovoltage (SPV) increases in both implanted and unimplanted sample sets. The increase in the SPV signal observed in implanted samples, which are subsequently annealed at 650 [degrees]C and 750 [degrees]C, is roughly two times greater than the appropriate values observed in unimplanted wafers. The effect in implanted samples is accompanied by longer time decays in the SPV transients (roughly from several to hundreds of microseconds). In marked contrast, unimplanted samples do not show such a significant difference in the decay times upon annealing. The decay times are fairly evenly distributed across the surface of the implanted but unannealed wafer, whereas the surface distribution function is essentially non-uniform in annealed samples. The results are discussed in terms of the temperature specific defect chemistry. The results of this work open new possibilities for studying defect rearrangement and clustering of atoms in implanted Si and advancing the development of silicon based photovoltaic materials with high photovoltage response. Supplementary data are available from stacks.iop.org/SST/. |
| Author | Popov, V Nadtochiy, A Romanyuk, B Melnik, V Korotchenkov, O |
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| Cites_doi | 10.1088/0268-1242/2/1/002 10.1016/S1369-8001(98)00045-6 10.1063/1.105350 10.3390/ma6115440 10.1007/BF00617135 10.1016/j.solmat.2010.04.030 10.1186/1556-276X-9-693 10.1016/S0927-0248(02)00042-9 10.1002/pssa.2210670117 10.1016/j.pquantelec.2005.01.002 10.1088/0268-1242/29/5/055008 10.1063/1.372397 10.1149/1.2717492 10.1063/1.3407562 10.1002/pssc.201084062 10.1088/0957-4484/19/42/424020 10.1088/0268-1242/7/1/009 10.1063/1.3466776 10.1149/06411.0187ecst |
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| Title | Photovoltage improvements in Cz-Si by low-energy implantation of carbon ions |
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