Structural and optoelectronic properties of LiYP (Y = Ca, Mg, and Zn) half-Heusler alloy under pressure: A DFT study

By adjusting the lattice geometry through pressure engineering, it is possible to further enhance and customize various properties of materials even at zero pressure. The utilization of pressure allows for the modification of the electronic structure of materials, presenting a relatively new approac...

Full description

Bibliographic Details

Published in:	Physica. B, Condensed matter Vol. 667; p. 415216
Main Authors:	Miri, Mohammed, Ziat, Younes, Belkhanchi, Hamza, Zarhri, Zakaryaa, Ait El Kadi, Youssef
Format:	Journal Article
Language:	English
Published:	Elsevier B.V 15.10.2023
Subjects:	Electronic properties Half-heusler Optoelectronic properties Pressure Semiconductors Electronic properties Semiconductors Optoelectronic properties Pressure Half-heusler
ISSN:	0921-4526, 1873-2135
Online Access:	Get full text
Tags:	Add Tag No Tags, Be the first to tag this record!