Stochastic simulation algorithms for solving a nonlinear system of drift–diffusion-Poisson equations of semiconductors

Stochastic simulation algorithms for solving transient nonlinear drift diffusion recombination transport equations are developed. The governing system of equations includes two drift–diffusion equations coupled with a Poisson equation for the potential whose gradient forms the drift velocity. A stoc...

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Vydáno v:	Physica A Ročník 556; s. 124800
Hlavní autoři:	Sabelfeld, Karl K., Kireeva, Anastasya
Médium:	Journal Article
Jazyk:	angličtina
Vydáno:	Elsevier B.V 15.10.2020
Témata:	Drift–diffusion-Poisson equation Global random walk on spheres Stochastic expansion from cell to cell algorithm Transport of electrons and holes Drift–diffusion-Poisson equation Transport of electrons and holes Global random walk on spheres Stochastic expansion from cell to cell algorithm
ISSN:	0378-4371, 1873-2119
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