Lifetime improvement in silicon wafers using weak magnetic fields
We improve the lifetime of n-type Czochralski-grown silicon wafers using weak magnetic fields. This processing is found to increase carrier lifetimes by up to a factor of 2, from about 3μs to 7μs in our samples. Employing atomic and magnetic force microscopy, surface photovoltage transients, and X-r...
Gespeichert in:
| Veröffentlicht in: | Materials science in semiconductor processing Jg. 66; S. 99 - 104 |
|---|---|
| Hauptverfasser: | , , , |
| Format: | Journal Article |
| Sprache: | Englisch |
| Veröffentlicht: |
Elsevier Ltd
01.08.2017
|
| Schlagworte: | |
| ISSN: | 1369-8001, 1873-4081 |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Abstract | We improve the lifetime of n-type Czochralski-grown silicon wafers using weak magnetic fields. This processing is found to increase carrier lifetimes by up to a factor of 2, from about 3μs to 7μs in our samples. Employing atomic and magnetic force microscopy, surface photovoltage transients, and X-ray photoelectron spectroscopy technique, we show that the effect can be explained by the magnetic field stimulated impurity diffusion from a bulk into the crystal surface, which forms impurity nanoclusters on the surface that can serve as centers of absorption of chemical elements from the environment. This, in turn, increases the oxide film thickness. We furthermore assume that the growth of SiO2 leads to negatively charged oxygen species in the vicinity of the Si/SiO2 interface. The existence of a local electric field generated by the charged areas can thus cause surface gettering by the positively charged metal ions, such as K+, Na+, Ca+, Al+, moved from the wafer bulk. Exposure to weak magnetic fields is therefore assumed to be important for the cost effective overall gettering efficiency during processing of silicon wafers for solar cell production. |
|---|---|
| AbstractList | We improve the lifetime of n-type Czochralski-grown silicon wafers using weak magnetic fields. This processing is found to increase carrier lifetimes by up to a factor of 2, from about 3μs to 7μs in our samples. Employing atomic and magnetic force microscopy, surface photovoltage transients, and X-ray photoelectron spectroscopy technique, we show that the effect can be explained by the magnetic field stimulated impurity diffusion from a bulk into the crystal surface, which forms impurity nanoclusters on the surface that can serve as centers of absorption of chemical elements from the environment. This, in turn, increases the oxide film thickness. We furthermore assume that the growth of SiO2 leads to negatively charged oxygen species in the vicinity of the Si/SiO2 interface. The existence of a local electric field generated by the charged areas can thus cause surface gettering by the positively charged metal ions, such as K+, Na+, Ca+, Al+, moved from the wafer bulk. Exposure to weak magnetic fields is therefore assumed to be important for the cost effective overall gettering efficiency during processing of silicon wafers for solar cell production. |
| Author | Nadtochiy, A. Korotchenkov, O. Steblenko, L. Kuryliuk, A. |
| Author_xml | – sequence: 1 givenname: A. surname: Kuryliuk fullname: Kuryliuk, A. email: kurylyuk_a2008@ukr.net – sequence: 2 givenname: L. surname: Steblenko fullname: Steblenko, L. – sequence: 3 givenname: A. surname: Nadtochiy fullname: Nadtochiy, A. – sequence: 4 givenname: O. surname: Korotchenkov fullname: Korotchenkov, O. |
| BookMark | eNp90E1LAzEQBuAgFazVP-Apf2DXSdL9CHgpxS8oeNFziMmkTO1mS7K2-O_dUk8eCi_MXJ6Bea_ZJPYRGbsTUAoQ9f2m7HLelRJEU4IaIy_YVLSNKubQism4q1oXLYC4Ytc5bwCgkqKessWKAg7UIadul_o9dhgHTpFn2pLrIz_YgCnz70xxzQ9ov3hn13EkjgfCrc837DLYbcbbvzljH0-P78uXYvX2_LpcrAqnAIaiRV-34bMJzstKC1uBl0oEaYWea6dDE2yQrUNnG-lVU9U6BAna6spbtOjVjMnTXZf6nBMGs0vU2fRjBJhjCWZjjiWYYwkG1Bg5ovYfcjTYgfo4JEvb8_ThRHF8ak-YTHaE0aGnhG4wvqdz_Bf3sHxM |
| CitedBy_id | crossref_primary_10_1016_j_micrna_2025_208212 crossref_primary_10_1088_1361_6463_ad5211 |
| Cites_doi | 10.1109/TDMR.2013.2258022 10.1070/PU1988v031n05ABEH003544 10.1088/0034-4885/67/11/R02 10.1063/1.118469 10.1063/1.1618912 10.1070/PU2004v047n02ABEH001683 10.1063/1.3625242 10.1109/JPHOTOV.2013.2282737 10.1103/PhysRevLett.93.086102 10.1063/1.1736034 10.1063/1.3407562 10.1109/PVSC.2012.6318216 10.1557/jmr.2006.0012 10.1016/j.mssp.2010.10.015 10.1016/j.cplett.2013.01.003 10.1063/1.342714 10.1587/elex.10.20132006 10.4028/www.scientific.net/SSP.108-109.339 10.1016/j.rser.2010.11.032 10.1103/PhysRevB.63.241304 10.1134/1.1620124 10.1002/pip.690 10.1016/S0039-6028(99)00712-8 10.1016/S0039-6028(97)00274-4 10.1109/TED.2006.878026 10.1016/j.rser.2015.09.043 10.1016/j.mee.2014.10.019 10.1149/1.2100566 10.1103/PhysRevB.5.4709 10.1002/pip.2352 10.1134/1.558209 10.1016/j.sse.2012.05.064 |
| ContentType | Journal Article |
| Copyright | 2017 Elsevier Ltd |
| Copyright_xml | – notice: 2017 Elsevier Ltd |
| DBID | AAYXX CITATION |
| DOI | 10.1016/j.mssp.2017.03.032 |
| DatabaseName | CrossRef |
| DatabaseTitle | CrossRef |
| DatabaseTitleList | |
| DeliveryMethod | fulltext_linktorsrc |
| Discipline | Engineering |
| EISSN | 1873-4081 |
| EndPage | 104 |
| ExternalDocumentID | 10_1016_j_mssp_2017_03_032 S1369800117308090 |
| GroupedDBID | --M -~X .DC .~1 0R~ 1B1 1~. 1~5 4.4 457 4G. 5GY 5VS 7-5 71M 8P~ AABXZ AACTN AAEDT AAEDW AAEPC AAIAV AAIKJ AAKOC AALRI AAOAW AAQFI AAXUO ABFRF ABJNI ABMAC ABXRA ABYKQ ACBEA ACDAQ ACGFO ACGFS ACRLP ADBBV ADEZE ADTZH AEBSH AECPX AEFWE AEKER AENEX AEZYN AFKWA AFRZQ AFTJW AGHFR AGUBO AGYEJ AHJVU AIEXJ AIKHN AITUG AJBFU AJOXV ALMA_UNASSIGNED_HOLDINGS AMFUW AMRAJ AXJTR BJAXD BKOJK BLXMC CS3 DU5 EBS EFJIC EFLBG EJD EO8 EO9 EP2 EP3 FDB FEDTE FIRID FNPLU FYGXN G-Q GBLVA HVGLF J1W JJJVA KOM M41 MAGPM MO0 N9A O-L O9- OAUVE P-8 P-9 P2P PC. Q38 RIG ROL RPZ SDF SDG SDP SES SPC SPCBC SSM SST SSZ T5K UNMZH XPP ZMT ~G- --K 29M 9DU AAQXK AATTM AAXKI AAYWO AAYXX ABWVN ABXDB ACLOT ACNNM ACRPL ACVFH ADCNI ADMUD ADNMO AEIPS AEUPX AFFNX AFJKZ AFPUW AGQPQ AIGII AIIUN AKBMS AKRWK AKYEP ANKPU APXCP ASPBG AVWKF AZFZN CITATION EFKBS FGOYB HZ~ IHE OZT R2- SEW ~HD |
| ID | FETCH-LOGICAL-c300t-8ed68fb7fcd2591a50d231f2a1949c9f7faf28ceca72d37569ff209a95daeaed3 |
| ISICitedReferencesCount | 4 |
| ISICitedReferencesURI | http://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=Summon&SrcAuth=ProQuest&DestLinkType=CitingArticles&DestApp=WOS_CPL&KeyUT=000403633400017&url=https%3A%2F%2Fcvtisr.summon.serialssolutions.com%2F%23%21%2Fsearch%3Fho%3Df%26include.ft.matches%3Dt%26l%3Dnull%26q%3D |
| ISSN | 1369-8001 |
| IngestDate | Sat Nov 29 07:52:36 EST 2025 Tue Nov 18 22:11:50 EST 2025 Fri Feb 23 02:19:15 EST 2024 |
| IsPeerReviewed | true |
| IsScholarly | true |
| Keywords | Magnetic field Silicon Point defects |
| Language | English |
| LinkModel | OpenURL |
| MergedId | FETCHMERGED-LOGICAL-c300t-8ed68fb7fcd2591a50d231f2a1949c9f7faf28ceca72d37569ff209a95daeaed3 |
| PageCount | 6 |
| ParticipantIDs | crossref_primary_10_1016_j_mssp_2017_03_032 crossref_citationtrail_10_1016_j_mssp_2017_03_032 elsevier_sciencedirect_doi_10_1016_j_mssp_2017_03_032 |
| PublicationCentury | 2000 |
| PublicationDate | 2017-08-01 2017-08-00 |
| PublicationDateYYYYMMDD | 2017-08-01 |
| PublicationDate_xml | – month: 08 year: 2017 text: 2017-08-01 day: 01 |
| PublicationDecade | 2010 |
| PublicationTitle | Materials science in semiconductor processing |
| PublicationYear | 2017 |
| Publisher | Elsevier Ltd |
| Publisher_xml | – name: Elsevier Ltd |
| References | Zhang, Liu, Wang, Chen (bib13) 2010; 13 Vavilov, Kiselev, Mukashev (bib34) 1990 Angermann, Henrion, Rebien, Zettler, Röseler (bib32) 1997; 388 Taguchi, Yano, Tohoda, Matsuyama, Nakamura, Nishiwaki, Fujita, Maruyama (bib6) 2014; 4 Bongiorno, Pasquarello (bib37) 2004; 93 Levin, Zon (bib21) 1997; 84 Parida, Iniyan, Goic (bib2) 2011; 15 Nadtochiy, Podolian, Korotchenkov, Schmid, Kancsar, Schlosser (bib28) 2011; 8 Koplak, Morgunov, Buchachenko (bib24) 2013; 560 Cotter, Guo, Cousins, Abbott, Chen, Fisher (bib9) 2006; 53 Dittrich, Schwartzkopff, Hartmann, Rappich (bib33) 1999; 437 Gambino, Adderly, Knickerbocker (bib16) 2015; 135 Shirley (bib29) 1972; 5 Podolian, Kozachenko, Nadtochiy, Borovoy, Korotchenkov (bib27) 2010; 107 Koplak, Dmitriev, Kakeshita, Morgunov (bib23) 2011; 110 Buonassisi, Istratov, Pickett, Heuer, Kalejs, Hahn, Marcus, Lai, Cai, Heald, Ciszek, Clark, Cunningham, Gabor, Jonczyk, Narayanan, Sauar, Weber (bib31) 2006; 14 Schmidt, Bothe, Macdonald, Adey, Jones, Palmer (bib1) 2006; 21 Green, Emery, Hishikawa, Warta, Dunlop (bib5) 2013; 21 Stoneham, Szymanski, Shluger (bib36) 2001; 63 Ya, Zel'dovich, Buchachenko (bib19) 1988; 31 Lee, Lee, Hwang, Kang (bib15) 2012; 76 Kang, Schroder (bib11) 1989; 65 Lee, Bea, Ohara, Murugesan, Fukushima, Tanaka, Koyanagi (bib14) 2014; 14 Motokawa (bib35) 2004; 67 Pandey, Tyagi, Selvaraj, Rahim, Tyagi (bib3) 2016; 53 Istratov, Buonassisi, McDonald, Smith, Schindler, Rand, Kalejs, Weber (bib30) 2003; 94 Tanaka (bib4) 2013; 10 Cuevas, Stocks, Armand, Stuckings (bib12) 1997; 70 Salikhov, Molin, Sagdeev, Buchachenko (bib18) 1984 Lin, Fan, Bard (bib25) 1987; 134 Zhong, Inniss, Kjoller, Elings (bib26) 1993; 290 Glunz, Preu, Biro (bib8) 2012; 1 D. Song, J. Xiong, Z. Hu, G. Li, H. Wang, H. An, B. Yu, B. Grenko, K. Borden, K. Sauer, T. Roessler, J. Cui, H. Wang, J. Bultman, A.H.G. Vlooswijk, P.R. Venema, in: Proceedings of the 38th IEEE photovoltaic specialists conference (PVSC), 3–8, 2012, 003004–003008. Levin, Tatarintsev, Kostsova, Kostsov (bib17) 2003; 48 Morgunov (bib22) 2004; 47 Shockley, Queisser (bib7) 1961; 32 Makara, Steblenko, Kolchenko, Naumenko, Patran, Kravchenko, Dranenko (bib20) 2005; 108–109 Shockley (10.1016/j.mssp.2017.03.032_bib7) 1961; 32 Dittrich (10.1016/j.mssp.2017.03.032_bib33) 1999; 437 Gambino (10.1016/j.mssp.2017.03.032_bib16) 2015; 135 Makara (10.1016/j.mssp.2017.03.032_bib20) 2005; 108–109 Kang (10.1016/j.mssp.2017.03.032_bib11) 1989; 65 Motokawa (10.1016/j.mssp.2017.03.032_bib35) 2004; 67 Lee (10.1016/j.mssp.2017.03.032_bib14) 2014; 14 Levin (10.1016/j.mssp.2017.03.032_bib17) 2003; 48 Schmidt (10.1016/j.mssp.2017.03.032_bib1) 2006; 21 10.1016/j.mssp.2017.03.032_bib10 Shirley (10.1016/j.mssp.2017.03.032_bib29) 1972; 5 Ya (10.1016/j.mssp.2017.03.032_bib19) 1988; 31 Zhang (10.1016/j.mssp.2017.03.032_bib13) 2010; 13 Tanaka (10.1016/j.mssp.2017.03.032_bib4) 2013; 10 Levin (10.1016/j.mssp.2017.03.032_bib21) 1997; 84 Bongiorno (10.1016/j.mssp.2017.03.032_bib37) 2004; 93 Istratov (10.1016/j.mssp.2017.03.032_bib30) 2003; 94 Vavilov (10.1016/j.mssp.2017.03.032_bib34) 1990 Stoneham (10.1016/j.mssp.2017.03.032_bib36) 2001; 63 Taguchi (10.1016/j.mssp.2017.03.032_bib6) 2014; 4 Cotter (10.1016/j.mssp.2017.03.032_bib9) 2006; 53 Morgunov (10.1016/j.mssp.2017.03.032_bib22) 2004; 47 Koplak (10.1016/j.mssp.2017.03.032_bib23) 2011; 110 Lin (10.1016/j.mssp.2017.03.032_bib25) 1987; 134 Buonassisi (10.1016/j.mssp.2017.03.032_bib31) 2006; 14 Glunz (10.1016/j.mssp.2017.03.032_bib8) 2012; 1 Green (10.1016/j.mssp.2017.03.032_bib5) 2013; 21 Cuevas (10.1016/j.mssp.2017.03.032_bib12) 1997; 70 Lee (10.1016/j.mssp.2017.03.032_bib15) 2012; 76 Zhong (10.1016/j.mssp.2017.03.032_bib26) 1993; 290 Podolian (10.1016/j.mssp.2017.03.032_bib27) 2010; 107 Nadtochiy (10.1016/j.mssp.2017.03.032_bib28) 2011; 8 Angermann (10.1016/j.mssp.2017.03.032_bib32) 1997; 388 Parida (10.1016/j.mssp.2017.03.032_bib2) 2011; 15 Pandey (10.1016/j.mssp.2017.03.032_bib3) 2016; 53 Salikhov (10.1016/j.mssp.2017.03.032_bib18) 1984 Koplak (10.1016/j.mssp.2017.03.032_bib24) 2013; 560 |
| References_xml | – volume: 48 start-page: 1304 year: 2003 end-page: 1306 ident: bib17 publication-title: Tech. Phys. – volume: 93 start-page: 086102 year: 2004 ident: bib37 publication-title: Phys. Rev. Lett. – volume: 84 start-page: 760 year: 1997 end-page: 773 ident: bib21 publication-title: J. Exp. Theor. Phys. – volume: 31 start-page: 385 year: 1988 end-page: 408 ident: bib19 publication-title: Frankevich, Sov. Phys. Usp. – volume: 94 start-page: 6552 year: 2003 end-page: 6559 ident: bib30 publication-title: J. Appl. Phys. – volume: 32 start-page: 510 year: 1961 end-page: 519 ident: bib7 publication-title: J. Appl. Phys. – reference: D. Song, J. Xiong, Z. Hu, G. Li, H. Wang, H. An, B. Yu, B. Grenko, K. Borden, K. Sauer, T. Roessler, J. Cui, H. Wang, J. Bultman, A.H.G. Vlooswijk, P.R. Venema, in: Proceedings of the 38th IEEE photovoltaic specialists conference (PVSC), 3–8, 2012, 003004–003008. – volume: 107 start-page: 093706 year: 2010 ident: bib27 publication-title: J. Appl. Phys. – volume: 1 year: 2012 ident: bib8 article-title: Crystalline silicon solar cells – state-of-the-art and future developments publication-title: Comprehensive – volume: 21 start-page: 5 year: 2006 end-page: 12 ident: bib1 publication-title: J. Mater. Res. – volume: 14 start-page: 451 year: 2014 end-page: 462 ident: bib14 publication-title: IEEE Trans. Device Mater. Reliab. – volume: 13 start-page: 209 year: 2010 end-page: 213 ident: bib13 publication-title: Mater. Sci. Semicond. Proc. – volume: 76 start-page: 30 year: 2012 end-page: 35 ident: bib15 publication-title: Solid-State Electron. – volume: 4 start-page: 96 year: 2014 end-page: 99 ident: bib6 publication-title: IEEE J. Photovolt. – volume: 15 start-page: 1625 year: 2011 end-page: 1636 ident: bib2 publication-title: Renew. Sustain. Energy Rev. – year: 1990 ident: bib34 article-title: Defekty v kremnii i na ego poverhnosti – volume: 14 start-page: 513 year: 2006 end-page: 531 ident: bib31 publication-title: Prog. Photo.: Res. Appl. – volume: 290 start-page: L688 year: 1993 end-page: L692 ident: bib26 publication-title: Surf. Sci. Lett. – volume: 388 start-page: 15 year: 1997 end-page: 23 ident: bib32 publication-title: Surf. Sci. – volume: 134 start-page: 1038 year: 1987 end-page: 1039 ident: bib25 publication-title: J. Electro Soc. – volume: 53 start-page: 1893 year: 2006 end-page: 1901 ident: bib9 publication-title: IEEE Trans. Electron. Devices – volume: 70 start-page: 1017 year: 1997 end-page: 1019 ident: bib12 publication-title: Appl. Phys. Lett. – volume: 110 start-page: 044905 year: 2011 ident: bib23 publication-title: J. Appl. Phys. – volume: 21 start-page: 1 year: 2013 end-page: 11 ident: bib5 publication-title: Prog. Photovolt.: Res. Appl. – volume: 67 start-page: 1995 year: 2004 end-page: 2052 ident: bib35 publication-title: Rep. Prog. Phys. – volume: 53 start-page: 859 year: 2016 end-page: 884 ident: bib3 publication-title: Renew. Sustain. Energy Rev. – year: 1984 ident: bib18 article-title: Spin Polarization and Magnetic Effects in Radical Reactions – volume: 10 start-page: 20132006 year: 2013 ident: bib4 publication-title: IEICE Electron. Express – volume: 135 start-page: 73 year: 2015 end-page: 106 ident: bib16 publication-title: Microelectron. Eng. – volume: 437 start-page: 154 year: 1999 end-page: 162 ident: bib33 publication-title: Surf. Sci. – volume: 5 start-page: 4709 year: 1972 end-page: 4714 ident: bib29 publication-title: Phys. Rev. B – volume: 560 start-page: 29 year: 2013 end-page: 31 ident: bib24 publication-title: Chem. Phys. Lett. – volume: 65 start-page: 2974 year: 1989 end-page: 2985 ident: bib11 publication-title: J. Appl. Phys. – volume: 47 start-page: 125 year: 2004 end-page: 148 ident: bib22 publication-title: Phys.-Uspekhi – volume: 8 start-page: 2927 year: 2011 end-page: 2930 ident: bib28 publication-title: Phys. Stat. Sol. C – volume: 63 start-page: 241304R year: 2001 ident: bib36 publication-title: Phys. Rev. B – volume: 108–109 start-page: 339 year: 2005 end-page: 344 ident: bib20 publication-title: Solid State Phenom. – volume: 14 start-page: 451 year: 2014 ident: 10.1016/j.mssp.2017.03.032_bib14 publication-title: IEEE Trans. Device Mater. Reliab. doi: 10.1109/TDMR.2013.2258022 – volume: 1 year: 2012 ident: 10.1016/j.mssp.2017.03.032_bib8 article-title: Crystalline silicon solar cells – state-of-the-art and future developments – volume: 31 start-page: 385 year: 1988 ident: 10.1016/j.mssp.2017.03.032_bib19 publication-title: Frankevich, Sov. Phys. Usp. doi: 10.1070/PU1988v031n05ABEH003544 – volume: 67 start-page: 1995 year: 2004 ident: 10.1016/j.mssp.2017.03.032_bib35 publication-title: Rep. Prog. Phys. doi: 10.1088/0034-4885/67/11/R02 – volume: 70 start-page: 1017 year: 1997 ident: 10.1016/j.mssp.2017.03.032_bib12 publication-title: Appl. Phys. Lett. doi: 10.1063/1.118469 – volume: 94 start-page: 6552 year: 2003 ident: 10.1016/j.mssp.2017.03.032_bib30 publication-title: J. Appl. Phys. doi: 10.1063/1.1618912 – volume: 47 start-page: 125 year: 2004 ident: 10.1016/j.mssp.2017.03.032_bib22 publication-title: Phys.-Uspekhi doi: 10.1070/PU2004v047n02ABEH001683 – volume: 110 start-page: 044905 year: 2011 ident: 10.1016/j.mssp.2017.03.032_bib23 publication-title: J. Appl. Phys. doi: 10.1063/1.3625242 – volume: 4 start-page: 96 year: 2014 ident: 10.1016/j.mssp.2017.03.032_bib6 publication-title: IEEE J. Photovolt. doi: 10.1109/JPHOTOV.2013.2282737 – year: 1990 ident: 10.1016/j.mssp.2017.03.032_bib34 – volume: 93 start-page: 086102 year: 2004 ident: 10.1016/j.mssp.2017.03.032_bib37 publication-title: Phys. Rev. Lett. doi: 10.1103/PhysRevLett.93.086102 – volume: 32 start-page: 510 year: 1961 ident: 10.1016/j.mssp.2017.03.032_bib7 publication-title: J. Appl. Phys. doi: 10.1063/1.1736034 – volume: 107 start-page: 093706 year: 2010 ident: 10.1016/j.mssp.2017.03.032_bib27 publication-title: J. Appl. Phys. doi: 10.1063/1.3407562 – ident: 10.1016/j.mssp.2017.03.032_bib10 doi: 10.1109/PVSC.2012.6318216 – volume: 21 start-page: 5 year: 2006 ident: 10.1016/j.mssp.2017.03.032_bib1 publication-title: J. Mater. Res. doi: 10.1557/jmr.2006.0012 – volume: 13 start-page: 209 year: 2010 ident: 10.1016/j.mssp.2017.03.032_bib13 publication-title: Mater. Sci. Semicond. Proc. doi: 10.1016/j.mssp.2010.10.015 – volume: 560 start-page: 29 year: 2013 ident: 10.1016/j.mssp.2017.03.032_bib24 publication-title: Chem. Phys. Lett. doi: 10.1016/j.cplett.2013.01.003 – volume: 65 start-page: 2974 year: 1989 ident: 10.1016/j.mssp.2017.03.032_bib11 publication-title: J. Appl. Phys. doi: 10.1063/1.342714 – volume: 10 start-page: 20132006 year: 2013 ident: 10.1016/j.mssp.2017.03.032_bib4 publication-title: IEICE Electron. Express doi: 10.1587/elex.10.20132006 – volume: 108–109 start-page: 339 year: 2005 ident: 10.1016/j.mssp.2017.03.032_bib20 publication-title: Solid State Phenom. doi: 10.4028/www.scientific.net/SSP.108-109.339 – volume: 8 start-page: 2927 year: 2011 ident: 10.1016/j.mssp.2017.03.032_bib28 publication-title: Phys. Stat. Sol. C – volume: 15 start-page: 1625 year: 2011 ident: 10.1016/j.mssp.2017.03.032_bib2 publication-title: Renew. Sustain. Energy Rev. doi: 10.1016/j.rser.2010.11.032 – volume: 63 start-page: 241304R year: 2001 ident: 10.1016/j.mssp.2017.03.032_bib36 publication-title: Phys. Rev. B doi: 10.1103/PhysRevB.63.241304 – volume: 48 start-page: 1304 year: 2003 ident: 10.1016/j.mssp.2017.03.032_bib17 publication-title: Tech. Phys. doi: 10.1134/1.1620124 – volume: 14 start-page: 513 year: 2006 ident: 10.1016/j.mssp.2017.03.032_bib31 publication-title: Prog. Photo.: Res. Appl. doi: 10.1002/pip.690 – volume: 437 start-page: 154 year: 1999 ident: 10.1016/j.mssp.2017.03.032_bib33 publication-title: Surf. Sci. doi: 10.1016/S0039-6028(99)00712-8 – volume: 388 start-page: 15 year: 1997 ident: 10.1016/j.mssp.2017.03.032_bib32 publication-title: Surf. Sci. doi: 10.1016/S0039-6028(97)00274-4 – volume: 53 start-page: 1893 year: 2006 ident: 10.1016/j.mssp.2017.03.032_bib9 publication-title: IEEE Trans. Electron. Devices doi: 10.1109/TED.2006.878026 – volume: 53 start-page: 859 year: 2016 ident: 10.1016/j.mssp.2017.03.032_bib3 publication-title: Renew. Sustain. Energy Rev. doi: 10.1016/j.rser.2015.09.043 – volume: 290 start-page: L688 year: 1993 ident: 10.1016/j.mssp.2017.03.032_bib26 publication-title: Surf. Sci. Lett. – volume: 135 start-page: 73 year: 2015 ident: 10.1016/j.mssp.2017.03.032_bib16 publication-title: Microelectron. Eng. doi: 10.1016/j.mee.2014.10.019 – year: 1984 ident: 10.1016/j.mssp.2017.03.032_bib18 – volume: 134 start-page: 1038 year: 1987 ident: 10.1016/j.mssp.2017.03.032_bib25 publication-title: J. Electro Soc. doi: 10.1149/1.2100566 – volume: 5 start-page: 4709 year: 1972 ident: 10.1016/j.mssp.2017.03.032_bib29 publication-title: Phys. Rev. B doi: 10.1103/PhysRevB.5.4709 – volume: 21 start-page: 1 year: 2013 ident: 10.1016/j.mssp.2017.03.032_bib5 publication-title: Prog. Photovolt.: Res. Appl. doi: 10.1002/pip.2352 – volume: 84 start-page: 760 year: 1997 ident: 10.1016/j.mssp.2017.03.032_bib21 publication-title: J. Exp. Theor. Phys. doi: 10.1134/1.558209 – volume: 76 start-page: 30 year: 2012 ident: 10.1016/j.mssp.2017.03.032_bib15 publication-title: Solid-State Electron. doi: 10.1016/j.sse.2012.05.064 |
| SSID | ssj0005216 |
| Score | 2.1295712 |
| Snippet | We improve the lifetime of n-type Czochralski-grown silicon wafers using weak magnetic fields. This processing is found to increase carrier lifetimes by up to... |
| SourceID | crossref elsevier |
| SourceType | Enrichment Source Index Database Publisher |
| StartPage | 99 |
| SubjectTerms | Magnetic field Point defects Silicon |
| Title | Lifetime improvement in silicon wafers using weak magnetic fields |
| URI | https://dx.doi.org/10.1016/j.mssp.2017.03.032 |
| Volume | 66 |
| WOSCitedRecordID | wos000403633400017&url=https%3A%2F%2Fcvtisr.summon.serialssolutions.com%2F%23%21%2Fsearch%3Fho%3Df%26include.ft.matches%3Dt%26l%3Dnull%26q%3D |
| hasFullText | 1 |
| inHoldings | 1 |
| isFullTextHit | |
| isPrint | |
| journalDatabaseRights | – providerCode: PRVESC databaseName: Elsevier SD Freedom Collection Journals 2021 customDbUrl: eissn: 1873-4081 dateEnd: 99991231 omitProxy: false ssIdentifier: ssj0005216 issn: 1369-8001 databaseCode: AIEXJ dateStart: 19980401 isFulltext: true titleUrlDefault: https://www.sciencedirect.com providerName: Elsevier |
| link | http://cvtisr.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwtV1Lb9NAEF5FLQc4IJ6i5aE9cLMcOX6t9xhVRTxK4FCk3Kz1PsBtake2k7aH_ndmHzZugYoekCIr2qw3jufLzOx45huE3gYpD4uCJ75-DAQbFBb5lBSFH2VCCEYpiwk3zSbIYpEtl_TrZHLV18JsV6SqsosLuv6vooYxELYunb2DuIdFYQDeg9DhCGKH4z8J_qhUUneM1wWQTW3owE0bgLZcgdQr75wpXbS7MUGCc8lOvTP2vdK1jJ5JZ2vH_upn1tlr9vr6H72STqivK80UWzfe2pYa9CbQPha6XJUbo2fn0yGG08kCTNypic0eDcMLJrqa_ygvr8_-VDe1BhTM3-pPvkzH8QmweX12XK9So5SCHXRDTuemY6VpOyQ58-u6Ef-m2W2Q4WR61raaZnRGDDeti41eo9G-Yd6GpMM-n-0k12vkeo08iOAFFnw3JAkFpbg7_3C4_DjKETK9c4ef4KqubILgzSv5s2cz8laOH6GHbpuB5xYej9FEVk_QgxH55FM074GCR0DBZYUdULAFCjZAwRoouAcKtkB5hr69Ozw-eO-7hho-j4Kg8zMp0kwVRHEBu94ZSwIB7r0K2YzGlFNFFFNhxiVnJBQRSVKqVBhQRhPBJJMieo52qrqSLxDmJFaxYIqBTo9ZqjmOGKGqAO-GZYWUe2jW34ycO7Z53fRklf9dDHvIG85ZW66VW2cn_T3O3V_AeoE5QOaW8_bv9C0v0f1foH6FdrpmI1-je3zblW3zxuHlJ3iHj2A |
| linkProvider | Elsevier |
| openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Lifetime+improvement+in+silicon+wafers+using+weak+magnetic+fields&rft.jtitle=Materials+science+in+semiconductor+processing&rft.au=Kuryliuk%2C+A.&rft.au=Steblenko%2C+L.&rft.au=Nadtochiy%2C+A.&rft.au=Korotchenkov%2C+O.&rft.date=2017-08-01&rft.issn=1369-8001&rft.volume=66&rft.spage=99&rft.epage=104&rft_id=info:doi/10.1016%2Fj.mssp.2017.03.032&rft.externalDBID=n%2Fa&rft.externalDocID=10_1016_j_mssp_2017_03_032 |
| thumbnail_l | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=1369-8001&client=summon |
| thumbnail_m | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=1369-8001&client=summon |
| thumbnail_s | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=1369-8001&client=summon |