Chemical vapor deposition of graphene and its characterizations and applications
Chemical vapor deposition (CVD) plays a crucial role in reactions at the atomic and molecular levels, facilitating the growth of thin material layers and synthesizing various nano-electronic materials. This review focuses primarily on graphene as a representative example. The control of graphene pro...
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| Veröffentlicht in: | Current applied physics Jg. 61; S. 55 - 70 |
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01.05.2024
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| Abstract | Chemical vapor deposition (CVD) plays a crucial role in reactions at the atomic and molecular levels, facilitating the growth of thin material layers and synthesizing various nano-electronic materials. This review focuses primarily on graphene as a representative example. The control of graphene properties is a significant and appealing aspect of graphene research. Graphene can be derived from natural graphite or artificially synthesized, with the latter offering relatively easier access and more straightforward property manipulation. This review delves into the intricate effects of doping and grain boundaries on CVD graphene properties, emphasizing modifications in atomic and electronic structures induced by nitrogen and boron dopants. In the case of single crystal CVD graphene, we have reviewed the transport properties of graphene devices, highlighting their extraordinarily high electronic quality comparable to exfoliated counterparts. In addition, in the final section, we briefly explore some representative application cases leveraging the unique advantages of large-area graphene.
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•This review understands the concept of CVD from Nature and summarizes previous research papers on CVD grown graphene.•It evaluates the basic properties of graphene synthesized by the CVD and reviews methods for controlling these properties.•The emphasis is on the synthesis of both pure and doped graphene, with a description of potential applications.•Various application examples utilizing the advantages of large-area graphene are summarized. |
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| AbstractList | Chemical vapor deposition (CVD) plays a crucial role in reactions at the atomic and molecular levels, facilitating the growth of thin material layers and synthesizing various nano-electronic materials. This review focuses primarily on graphene as a representative example. The control of graphene properties is a significant and appealing aspect of graphene research. Graphene can be derived from natural graphite or artificially synthesized, with the latter offering relatively easier access and more straightforward property manipulation. This review delves into the intricate effects of doping and grain boundaries on CVD graphene properties, emphasizing modifications in atomic and electronic structures induced by nitrogen and boron dopants. In the case of single crystal CVD graphene, we have reviewed the transport properties of graphene devices, highlighting their extraordinarily high electronic quality comparable to exfoliated counterparts. In addition, in the final section, we briefly explore some representative application cases leveraging the unique advantages of large-area graphene.
[Display omitted]
•This review understands the concept of CVD from Nature and summarizes previous research papers on CVD grown graphene.•It evaluates the basic properties of graphene synthesized by the CVD and reviews methods for controlling these properties.•The emphasis is on the synthesis of both pure and doped graphene, with a description of potential applications.•Various application examples utilizing the advantages of large-area graphene are summarized. |
| Author | Yang, Jing Zhao, Yue Kim, Keun Soo Nam, Jungtae |
| Author_xml | – sequence: 1 givenname: Jungtae surname: Nam fullname: Nam, Jungtae organization: Department of Physics and Graphene Research Institute, Sejong University, Seoul, 05006, Republic of Korea – sequence: 2 givenname: Jing surname: Yang fullname: Yang, Jing organization: Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology, Shenzhen, 518055, China – sequence: 3 givenname: Yue orcidid: 0000-0002-0947-2843 surname: Zhao fullname: Zhao, Yue email: zhaoy@sustech.edu.cn organization: Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology, Shenzhen, 518055, China – sequence: 4 givenname: Keun Soo orcidid: 0000-0002-4901-6156 surname: Kim fullname: Kim, Keun Soo email: kskim2676@sejong.ac.kr organization: Department of Physics and Graphene Research Institute, Sejong University, Seoul, 05006, Republic of Korea |
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| Keywords | Characterizations Nanomaterials Graphene Chemical vapor deposition Doping |
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