CMOS-Based High-Density Silicon Microprobe Arrays for Electronic Depth Control in Intracortical Neural Recording-Characterization and Application

This paper reports on the characterization and intracortical recording performance of high-density complementary-metal-oxide-semiconductor (CMOS)-based silicon microprobe arrays. They comprise multiplexing units integrated on the probe shafts being part of the signal transmission path. Their electri...

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Veröffentlicht in:Journal of microelectromechanical systems Jg. 21; H. 6; S. 1426 - 1435
Hauptverfasser: Seidl, K., Schwaerzle, M., Ulbert, I., Neves, H. P., Paul, O., Ruther, P.
Format: Journal Article
Sprache:Englisch
Veröffentlicht: New York, NY IEEE 01.12.2012
Institute of Electrical and Electronics Engineers
Schlagworte:
Applied sciences
CMOS integrated circuits
CMOS MEMS
Complementary-metal-oxide-semiconductor (CMOS) circuitry
Crosstalk
electrode impedances
electrode selection
Electrodes
Electronics
Exact sciences and technology
high-density electrode array
Impedance
Instruments, apparatus, components and techniques common to several branches of physics and astronomy
Mechanical instruments, equipment and techniques
Micro- and nanoelectromechanical devices (mems/nems)
Micromechanical devices and systems
neural recording
Neurons
noise
Physics
potential measurements
Probes
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Shafts
silicon microprobes
Microprobe
Multiplexing
Energy consumption
Crosstalk
Central nervous system
Data transmission
electrode selection
Shafts
Platinum
Complementary MOS technology
Complementary-metal-oxide-semiconductor (CMOS) circuitry
noise
Silicon
Microsensors
Microelectromechanical device
Microelectrodes
potential measurements
Signal-to-noise ratio
CMOS MEMS
high-density electrode array
In vivo
Electrical measurement
neural recording
silicon microprobes
electrode impedances
ISSN:1057-7157, 1941-0158
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Beschreibung
Zusammenfassung:This paper reports on the characterization and intracortical recording performance of high-density complementary-metal-oxide-semiconductor (CMOS)-based silicon microprobe arrays. They comprise multiplexing units integrated on the probe shafts being part of the signal transmission path. Their electrical characterization reveals a negligible contribution on the electrode impedances of 139 ±11 kΩ and 1.2 ±0.1 MΩ and on the crosstalks of 0.12% and 0.98% for iridium oxide ( IrO x ) and platinum (Pt) electrodes, respectively. The power consumption of the single-shaft probe was found to be 57.5 μW during electrode selection. The noise voltage of the switches was determined to be 5.6 nV/√Hz; it does not measurably affect the probe performance. The recording selectivity of the electrode array is demonstrated by electrical potential measurements in saline solution while injecting a stimulating current using an external probe. In-vivo recordings in anesthetized rats using all 188 electrodes with a pitch of 40.7 μm are presented and analyzed in terms of single neural activity and signal-to-noise ratio. The concept of electronic depth control is proven by performing mechanical translation of the probe shaft while electronically switching to adjacent electrodes to compensate the mechanical shift.
ISSN:1057-7157
1941-0158
DOI:10.1109/JMEMS.2012.2206564