Soft-Error-Immune Quadruple-Node-Upset Tolerant Latch Based on Polarity Design and Source-Isolation Technologies

A soft-error-immune quadruple-node-upset tolerant latch (SEI-QNUTL) with a low delay and high performance is proposed using 65-nm CMOS technology. The proposed SEI-QNUTL design consists of three soft-error-immune static random access memory (SEI-SRAM) cells. Furthermore, each SEI-SRAM cell employs p...

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Vydané v:	IEEE transactions on very large scale integration (VLSI) systems Ročník 32; číslo 4; s. 597 - 608
Hlavní autori:	Hao, Licai, Zhang, Xinyi, Dai, Chenghu, Zhao, Qiang, Lu, Wenjuan, Peng, Chunyu, Zhou, Yongliang, Lin, Zhiting, Wu, Xiulong
Médium:	Journal Article
Jazyk:	English
Vydavateľské údaje:	New York IEEE 01.04.2024 The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Predmet:	Algorithms Data storage Delay Delays High performance high reliability Latches MOSFET Nodes polarity design technology Power consumption quadruple-node-upset (QNU) Random access memory Reliability Reliability engineering Robustness Safety critical Soft errors source-isolation technology Static random access memory Transistors Voltage
ISSN:	1063-8210, 1557-9999
On-line prístup:	Získať plný text
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