Optimizing Write Fidelity of MRAMs by Alternating Water-Filling Algorithm

Magnetic random-access memory (MRAM) is a promising memory technology due to its high density, non-volatility, and high endurance. However, achieving high memory fidelity incurs high write-energy costs, which should be reduced for large-scale deployment of MRAMs. In this paper, we formulate a biconv...

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Bibliographic Details
Published in:	IEEE transactions on communications Vol. 70; no. 9; pp. 5825 - 5836
Main Authors:	Kim, Yongjune, Jeon, Yoocharn, Choi, Hyeokjin, Guyot, Cyril, Cassuto, Yuval
Format:	Journal Article
Language:	English
Published:	New York IEEE 01.09.2022 The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects:	Accuracy Algorithms approximate memory approximate storage Artificial neural networks biconvex optimization Classification Energy costs Exact solutions information theory Iterative algorithms Magnetic random-access memory (MRAM) Magnetic tunneling Magnetization Nonlinear programming Optimization Position measurement Random access memory Resistance Signal processing algorithms Switches
ISSN:	0090-6778, 1558-0857
Online Access:	Get full text
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