Optimizing Write Fidelity of MRAMs by Alternating Water-Filling Algorithm

Magnetic random-access memory (MRAM) is a promising memory technology due to its high density, non-volatility, and high endurance. However, achieving high memory fidelity incurs high write-energy costs, which should be reduced for large-scale deployment of MRAMs. In this paper, we formulate a biconv...

Celý popis

Uloženo v:

Podrobná bibliografie
Vydáno v:	IEEE transactions on communications Ročník 70; číslo 9; s. 5825 - 5836
Hlavní autoři:	Kim, Yongjune, Jeon, Yoocharn, Choi, Hyeokjin, Guyot, Cyril, Cassuto, Yuval
Médium:	Journal Article
Jazyk:	angličtina
Vydáno:	New York IEEE 01.09.2022 The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Témata:	Accuracy Algorithms approximate memory approximate storage Artificial neural networks biconvex optimization Classification Energy costs Exact solutions information theory Iterative algorithms Magnetic random-access memory (MRAM) Magnetic tunneling Magnetization Nonlinear programming Optimization Position measurement Random access memory Resistance Signal processing algorithms Switches
ISSN:	0090-6778, 1558-0857
On-line přístup:	Získat plný text
Tagy:	Přidat tag Žádné tagy, Buďte první, kdo vytvoří štítek k tomuto záznamu!

Buďte první, kdo okomentuje tento záznam!