Integration of on-line machine learning-based endpoint control and run-to-run control for an atomic layer etching process

Control methods for Atomic Layer Etching (ALE) processes are constantly evolving due to the increasing level of precision needed to manufacture next-gen semiconductor devices. This work presents a novel, real-time Endpoint-based (EP) control approach for an Al2O3 ALE process in a discrete feed react...

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Veröffentlicht in:	Digital Chemical Engineering Jg. 14; S. 100206
Hauptverfasser:	Wang, Henrik, Ou, Feiyang, Suherman, Julius, Orkoulas, Gerassimos, Christofides, Panagiotis D.
Format:	Journal Article
Sprache:	Englisch
Veröffentlicht:	Elsevier Ltd 01.03.2025
Schlagworte:	Atomic layer etching Multiscale computational fluid dynamics modeling Process control Semiconductor manufacturing processes Atomic layer etching Semiconductor manufacturing processes Multiscale computational fluid dynamics modeling Process control
ISSN:	2772-5081, 2772-5081
Online-Zugang:	Volltext
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