NEST: A Quadruple-Node Upset Recovery Latch Design and Algorithm-Based Recovery Optimization

Multinode upset induced by radiation on integrated circuits has caused many circuit reliability issues. This article proposes a single-event quadruple-node upset (QNU) recovery latch (NEST), based on four circular feedback loops that are formed by 25 C-elements to realize high robustness. NEST achie...

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on aerospace and electronic systems Vol. 60; no. 4; pp. 4590 - 4600
Main Authors: Huang, Zhengfeng, Sun, Liting, Wang, Xu, Liang, Huaguo, Lu, Yingchun, Yan, Aibin, Pan, Jun, Wen, Xiaoqing
Format: Journal Article
Language:English
Published: New York IEEE 01.08.2024
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects:
ISSN:0018-9251, 1557-9603
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Multinode upset induced by radiation on integrated circuits has caused many circuit reliability issues. This article proposes a single-event quadruple-node upset (QNU) recovery latch (NEST), based on four circular feedback loops that are formed by 25 C-elements to realize high robustness. NEST achieves 29.02% reduction in power consumption compared to the latch design and algorithm-based verification protected against multiple-node upset (LDAVPM) latch and 51.44% reduction in setup time compared to the quadruple-node upset recoverable and high-impedance-state insensitive latch (QRHIL) latch. NEST also achieves a 99.29% QNU recovery rate. Furthermore, a high-speed, high-precision optimization algorithm for multinode upset recovery is also proposed and implemented. This algorithm achieves 99.84 reduction in simulation time for exhaustive fault injections having equivalent accuracy with high performance simulation program with integrated circuit emphasis (HSPICE).
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 14
ISSN:0018-9251
1557-9603
DOI:10.1109/TAES.2024.3379962