An 8b-Precision 6T SRAM Computing-in-Memory Macro Using Time-Domain Incremental Accumulation for AI Edge Chips

This article presents a novel static random access memory computing-in-memory (SRAM-CIM) structure designed for high-precision multiply-and-accumulate (MAC) operations with high energy efficiency (EF), high readout accuracy, and short compute latency. The proposed device employs 1) a time-domain inc...

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Veröffentlicht in:	IEEE journal of solid-state circuits Jg. 59; H. 7; S. 2297 - 2309
Hauptverfasser:	Wu, Ping-Chun, Su, Jian-Wei, Chung, Yen-Lin, Hong, Li-Yang, Ren, Jin-Sheng, Chang, Fu-Chun, Wu, Yuan, Chen, Ho-Yu, Lin, Chen-Hsun, Hsiao, Hsu-Ming, Li, Sih-Han, Sheu, Shyh-Shyuan, Chang, Shih-Chieh, Lo, Wei-Chung, Wu, Chih-I, Lo, Chung-Chuan, Liu, Ren-Shuo, Hsieh, Chih-Cheng, Tang, Kea-Tiong, Chang, Meng-Fan
Format:	Journal Article
Sprache:	Englisch
Veröffentlicht:	New York IEEE 01.07.2024 The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Schlagworte:	Accumulation Artificial intelligence Artificial intelligence (AI) Co-design Computation computing-in-memory (CIM) Edge AI Energy consumption In-memory computing inference Inference mechanisms multiply-and-accumulate (MAC) SRAM cells Static random access memory static random access memory (SRAM) Time domain analysis
ISSN:	0018-9200, 1558-173X
Online-Zugang:	Volltext
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