Cascode GaN/SiC: A Wide-Bandgap Heterogenous Power Device for High-Frequency Applications

Wireless power transfer systems and plasma generators are among the increasing number of applications that use high-frequency power converters. Increasing switching frequency can reduce the energy storage requirements of the passive elements that can lead to higher power densities or even the elimin...

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Vydáno v:	IEEE transactions on power electronics Ročník 35; číslo 6; s. 6340 - 6349
Hlavní autoři:	Xu, Jiale, Gu, Lei, Ye, Zhechi, Kargarrazi, Saleh, Rivas-Davila, Juan Manuel
Médium:	Journal Article
Jazyk:	angličtina
Vydáno:	New York IEEE 01.06.2020 The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Témata:	Circuits Conduction losses Electronic devices Energy dissipation Energy gap Energy storage Field effect transistors Gallium nitride Gallium nitride (GaN) Gallium nitrides HEMTs High frequencies High voltages JFETs Logic gates Magnetic cores Plasma generators power <sc xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">mosfet power amplifiers Power converters Ratings Semiconductor devices Silicon carbide silicon carbide (SiC) Switches Switching Thermal conductivity Wireless power transmission
ISSN:	0885-8993, 1941-0107
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