Reliable Hybrid Small-Signal Modeling of GaN HEMTs Based on Particle-Swarm-Optimization

This paper presents an efficient parameter extraction method applied to GaN high electron mobility transistors. The procedure only relies on <inline-formula> <tex-math notation="LaTeX">{S} </tex-math></inline-formula>-parameter measurements at cold bias conditions t...

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Bibliographic Details
Published in:	IEEE transactions on computer-aided design of integrated circuits and systems Vol. 37; no. 9; pp. 1816 - 1824
Main Authors:	Hussein, Ahmed S., Jarndal, Anwar H.
Format:	Journal Article
Language:	English
Published:	New York IEEE 01.09.2018 The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects:	Capacitance Computer simulation Electron mobility Gallium nitride GaN high electron mobility transistor (HEMT) HEMTs High electron mobility transistors Mathematical models MODFETs Optimization Parameters parameters extraction Particle swarm optimization particle swarm optimization (PSO) Reliability Semiconductor devices small-signal modeling Solid modeling
ISSN:	0278-0070, 1937-4151
Online Access:	Get full text
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