A Predictive Algorithm for Crosstalk Peaks of SiC MOSFET by Considering the Nonlinearity of Gate-Drain Capacitance

A predictive algorithm for accurately determining the crosstalk peaks caused by SiC MOSFET s is proposed in this article, which is very important to better design the drive and protect circuits of SiC MOSFET s. Compared to the conventional algorithm of crosstalk peaks, the nonlinearity of gate-drain...

Full description

Saved in:

Bibliographic Details
Published in:	IEEE transactions on power electronics Vol. 36; no. 3; pp. 2823 - 2834
Main Authors:	Li, Hong, Jiang, Yanfeng, Qiu, Zhidong, Wang, Yuting, Ding, Yuhang
Format:	Journal Article
Language:	English
Published:	New York IEEE 01.03.2021 The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects:	Algorithms Capacitance Circuit design Circuit protection Crosstalk Crosstalk peaks gate-drain capacitance (<named-content xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" content-type="math" xlink:type="simple"> <inline-formula> <tex-math notation="LaTeX"> C_{gd}</tex-math> </inline-formula> </named-content>) Logic gates Mathematical analysis MOSFET MOSFETs Nonlinearity phase-leg configuration Prediction algorithms SiC <sc xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">MOSFET s Silicon carbide Switches
ISSN:	0885-8993, 1941-0107
Online Access:	Get full text
Tags:	Add Tag No Tags, Be the first to tag this record!

Be the first to leave a comment!