A Predictive Algorithm for Crosstalk Peaks of SiC MOSFET by Considering the Nonlinearity of Gate-Drain Capacitance

A predictive algorithm for accurately determining the crosstalk peaks caused by SiC MOSFET s is proposed in this article, which is very important to better design the drive and protect circuits of SiC MOSFET s. Compared to the conventional algorithm of crosstalk peaks, the nonlinearity of gate-drain...

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on power electronics Vol. 36; no. 3; pp. 2823 - 2834
Main Authors: Li, Hong, Jiang, Yanfeng, Qiu, Zhidong, Wang, Yuting, Ding, Yuhang
Format: Journal Article
Language:English
Published: New York IEEE 01.03.2021
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects:
Algorithms
Capacitance
Circuit design
Circuit protection
Crosstalk
Crosstalk peaks
gate-drain capacitance (<named-content xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" content-type="math" xlink:type="simple"> <inline-formula> <tex-math notation="LaTeX"> C_{gd}</tex-math> </inline-formula> </named-content>)
Logic gates
Mathematical analysis
MOSFET
MOSFETs
Nonlinearity
phase-leg configuration
Prediction algorithms
SiC <sc xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">MOSFET s
Silicon carbide
Switches
ISSN:0885-8993, 1941-0107
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Abstract A predictive algorithm for accurately determining the crosstalk peaks caused by SiC MOSFET s is proposed in this article, which is very important to better design the drive and protect circuits of SiC MOSFET s. Compared to the conventional algorithm of crosstalk peaks, the nonlinearity of gate-drain capacitance ( C gd ) is first considered in the proposed algorithm. In detail, the differential expression of the crosstalk peaks is deduced, in which, the main factors affecting crosstalk peaks are all included. Following, the execution flow of the predictive algorithm is provided according to the differential expression. To verify the accuracy of the proposed algorithm with considering the nonlinearity of C gd , the simulation and experiment platforms are established and verified by using Kelvin packaged SiC MOSFET IMZ120R045M1 (1200 V/52 A). The calculation results of the proposed algorithm are compared with the conventional algorithm without considering the nonlinearity of C gd under different working conditions of SiC MOSFET . Finally, the calculation results, the simulation, and experiment results show that the proposed algorithm is effective and has better accuracy. Therefore, the predictive algorithm proposed in this article provides a theoretical reference to better design the drive and protect circuits of SiC MOSFET s.
AbstractList A predictive algorithm for accurately determining the crosstalk peaks caused by SiC MOSFET s is proposed in this article, which is very important to better design the drive and protect circuits of SiC MOSFET s. Compared to the conventional algorithm of crosstalk peaks, the nonlinearity of gate-drain capacitance ( C gd ) is first considered in the proposed algorithm. In detail, the differential expression of the crosstalk peaks is deduced, in which, the main factors affecting crosstalk peaks are all included. Following, the execution flow of the predictive algorithm is provided according to the differential expression. To verify the accuracy of the proposed algorithm with considering the nonlinearity of C gd , the simulation and experiment platforms are established and verified by using Kelvin packaged SiC MOSFET IMZ120R045M1 (1200 V/52 A). The calculation results of the proposed algorithm are compared with the conventional algorithm without considering the nonlinearity of C gd under different working conditions of SiC MOSFET . Finally, the calculation results, the simulation, and experiment results show that the proposed algorithm is effective and has better accuracy. Therefore, the predictive algorithm proposed in this article provides a theoretical reference to better design the drive and protect circuits of SiC MOSFET s.
Author Ding, Yuhang
Li, Hong
Qiu, Zhidong
Jiang, Yanfeng
Wang, Yuting
Author_xml – sequence: 1
  givenname: Hong
  orcidid: 0000-0002-8117-8980
  surname: Li
  fullname: Li, Hong
  email: hli@bjtu.edu.cn
  organization: School of Electrical Engineering, Beijing Jiaotong University, Beijing, China
– sequence: 2
  givenname: Yanfeng
  surname: Jiang
  fullname: Jiang, Yanfeng
  email: 17121449@bjtu.edu.cn
  organization: School of Electrical Engineering, Beijing Jiaotong University, Beijing, China
– sequence: 3
  givenname: Zhidong
  orcidid: 0000-0002-8187-3780
  surname: Qiu
  fullname: Qiu, Zhidong
  email: zhidongqiu@bjtu.edu.cn
  organization: School of Electrical Engineering, Beijing Jiaotong University, Beijing, China
– sequence: 4
  givenname: Yuting
  surname: Wang
  fullname: Wang, Yuting
  email: 18121510@bjtu.edu.cn
  organization: School of Electrical Engineering, Beijing Jiaotong University, Beijing, China
– sequence: 5
  givenname: Yuhang
  orcidid: 0000-0003-0384-4092
  surname: Ding
  fullname: Ding, Yuhang
  email: 18121430@bjtu.edu.cn
  organization: School of Electrical Engineering, Beijing Jiaotong University, Beijing, China
BookMark eNp9kMtOwzAQRS0EEuXxAYiNJdYp4zh27GUVnlKBSsA6moYJGIJdHIPUvydREQsWrGZzzx3ds8e2ffDE2JGAqRBgTx8W5_NpDjlMJQgtlNpiE2ELkYGAcptNwBiVGWvlLtvr-1cAUSgQExZnfBHpyTXJfRGfdc8huvTyztsQeRVD3yfs3viC8K3noeX3ruI3d_cX5w98ueZV8L17ouj8M08vxG-D75wnHCrWY_oSE2VnEZ3nFa6wcQl9Qwdsp8Wup8Ofu88eh77qKpvfXV5Xs3nW5FamTCnMQbdqaQssQBorgLRqy0KWuZRGq-Uy14TQ2kKZlow2DSlUKJCglGjkPjvZ9K5i-PikPtWv4TP64WWdF0qrvCytGlJik2rGtZHaehXdO8Z1LaAe1daj2npUW_-oHZjyDzNOSy74NIzt_iWPN6Qjot9PVmhltZXf5aOHIg
CODEN ITPEE8
CitedBy_id crossref_primary_10_1109_TPEL_2022_3219241
crossref_primary_10_1109_TPEL_2024_3439364
crossref_primary_10_1109_TPEL_2021_3139466
crossref_primary_10_1016_j_cej_2025_159430
crossref_primary_10_1109_TIE_2024_3488284
crossref_primary_10_3390_en14030683
crossref_primary_10_1109_TPEL_2024_3362367
crossref_primary_10_1109_JESTPE_2024_3502905
crossref_primary_10_1109_TPEL_2022_3151776
crossref_primary_10_1109_TPEL_2025_3540060
crossref_primary_10_1109_TPEL_2022_3221640
crossref_primary_10_1109_JESTPE_2021_3113369
crossref_primary_10_1109_TPEL_2023_3274520
crossref_primary_10_32604_EE_2021_014549
crossref_primary_10_1088_1742_6596_2095_1_012005
crossref_primary_10_3390_electronics13152922
crossref_primary_10_23919_CJEE_2024_000072
crossref_primary_10_1109_JESTPE_2024_3410396
crossref_primary_10_1109_TIA_2024_3403963
crossref_primary_10_1109_TPEL_2024_3440267
crossref_primary_10_1109_ACCESS_2022_3179403
crossref_primary_10_3390_ma15175995
crossref_primary_10_1109_JESTPE_2024_3518570
crossref_primary_10_1109_JESTIE_2024_3476274
crossref_primary_10_1109_TPEL_2022_3200456
crossref_primary_10_1109_TPEL_2024_3452236
crossref_primary_10_1109_MPEL_2022_3216764
Cites_doi 10.1109/TPEL.2015.2506400
10.1109/TIE.2017.2652401
10.1109/ECCE.2012.6342164
10.1109/APEC.2019.8721795
10.1109/TPEL.2015.2445375
10.1049/iet-pel.2018.5838
10.1109/TIE.2010.2072896
10.1109/TPEL.2017.2655496
10.1109/TIE.2015.2491880
10.1109/TPEL.2018.2865611
10.1109/TPEL.2013.2268900
10.1109/TPEL.2014.2327014
10.1109/TED.2014.2362657
10.1109/TPEL.2017.2690938
10.1109/TPEL.2017.2684094
10.1109/IPEMC.2016.7512539
10.1109/INTLEC.2004.1401538
10.1109/ECMSM.2017.7945876
10.1109/JESTPE.2018.2877968
10.1109/TPEL.2012.2195332
10.1109/TIE.2017.2736500
10.1109/TIE.2017.2721885
10.1109/TIE.2017.2719603
10.1109/TSP.2013.2264054
ContentType Journal Article
Copyright Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2021
Copyright_xml – notice: Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2021
DBID 97E
RIA
RIE
AAYXX
CITATION
7SP
7TB
8FD
FR3
JQ2
KR7
L7M
DOI 10.1109/TPEL.2020.3016155
DatabaseName IEEE Xplore (IEEE)
IEEE All-Society Periodicals Package (ASPP) 1998–Present
IEEE Electronic Library (IEL)
CrossRef
Electronics & Communications Abstracts
Mechanical & Transportation Engineering Abstracts
Technology Research Database
Engineering Research Database
ProQuest Computer Science Collection
Civil Engineering Abstracts
Advanced Technologies Database with Aerospace
DatabaseTitle CrossRef
Civil Engineering Abstracts
Technology Research Database
Mechanical & Transportation Engineering Abstracts
Electronics & Communications Abstracts
ProQuest Computer Science Collection
Engineering Research Database
Advanced Technologies Database with Aerospace
DatabaseTitleList
Civil Engineering Abstracts
Database_xml – sequence: 1
  dbid: RIE
  name: IEEE
  url: https://ieeexplore.ieee.org/
  sourceTypes: Publisher
DeliveryMethod fulltext_linktorsrc
Discipline Engineering
EISSN 1941-0107
EndPage 2834
ExternalDocumentID 10_1109_TPEL_2020_3016155
9165969
Genre orig-research
GrantInformation_xml – fundername: National Natural Science Foundation of China
  grantid: 51822701
  funderid: 10.13039/501100001809
– fundername: National Natural Science Foundation of China
  grantid: U1866211
  funderid: 10.13039/501100001809
GroupedDBID -~X
0R~
29I
3EH
4.4
5GY
5VS
6IK
97E
AAJGR
AARMG
AASAJ
AAWTH
ABAZT
ABFSI
ABQJQ
ABVLG
ACGFO
ACGFS
ACIWK
ACKIV
AENEX
AETIX
AGQYO
AGSQL
AHBIQ
AI.
AIBXA
AKJIK
AKQYR
ALLEH
ALMA_UNASSIGNED_HOLDINGS
ASUFR
ATWAV
BEFXN
BFFAM
BGNUA
BKEBE
BKOMP
BPEOZ
CS3
DU5
E.L
EBS
EJD
HZ~
H~9
ICLAB
IFIPE
IFJZH
IPLJI
JAVBF
LAI
M43
MS~
O9-
OCL
P2P
PQQKQ
RIA
RIE
RNS
RXW
TAE
TAF
TN5
VH1
VJK
AAYXX
CITATION
7SP
7TB
8FD
FR3
JQ2
KR7
L7M
ID FETCH-LOGICAL-c293t-55a206f5b94a4038910e65f7437233865bb26ea0f9458fe868ce5a5a1ae073a83
IEDL.DBID RIE
ISICitedReferencesCount 39
ISICitedReferencesURI http://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=Summon&SrcAuth=ProQuest&DestLinkType=CitingArticles&DestApp=WOS_CPL&KeyUT=000583807100035&url=https%3A%2F%2Fcvtisr.summon.serialssolutions.com%2F%23%21%2Fsearch%3Fho%3Df%26include.ft.matches%3Dt%26l%3Dnull%26q%3D
ISSN 0885-8993
IngestDate Sun Jun 29 15:29:58 EDT 2025
Tue Nov 18 21:32:39 EST 2025
Sat Nov 29 03:54:43 EST 2025
Wed Aug 27 02:31:53 EDT 2025
IsPeerReviewed true
IsScholarly true
Issue 3
Language English
License https://ieeexplore.ieee.org/Xplorehelp/downloads/license-information/IEEE.html
https://doi.org/10.15223/policy-029
https://doi.org/10.15223/policy-037
LinkModel DirectLink
MergedId FETCHMERGED-LOGICAL-c293t-55a206f5b94a4038910e65f7437233865bb26ea0f9458fe868ce5a5a1ae073a83
Notes ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 14
ORCID 0000-0002-8117-8980
0000-0002-8187-3780
0000-0003-0384-4092
PQID 2456527795
PQPubID 37080
PageCount 12
ParticipantIDs ieee_primary_9165969
crossref_primary_10_1109_TPEL_2020_3016155
proquest_journals_2456527795
crossref_citationtrail_10_1109_TPEL_2020_3016155
PublicationCentury 2000
PublicationDate 2021-03-01
PublicationDateYYYYMMDD 2021-03-01
PublicationDate_xml – month: 03
  year: 2021
  text: 2021-03-01
  day: 01
PublicationDecade 2020
PublicationPlace New York
PublicationPlace_xml – name: New York
PublicationTitle IEEE transactions on power electronics
PublicationTitleAbbrev TPEL
PublicationYear 2021
Publisher IEEE
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher_xml – name: IEEE
– name: The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
References ref13
ref12
ref14
ref11
ref10
(ref21) 2020
ref2
ref1
ref17
ref16
ref19
r?bkowski (ref6) 2015
ref18
xu (ref22) 2015
ref24
ref23
ref26
ref20
huang (ref25) 2016
ref28
ref27
wu (ref15) 2012
ref29
ref8
ref7
ref9
ref4
ref3
ref5
References_xml – ident: ref4
  doi: 10.1109/TPEL.2015.2506400
– ident: ref2
  doi: 10.1109/TIE.2017.2652401
– start-page: 1
  year: 2015
  ident: ref22
  article-title: Study on the Pspice simulation model of SiC MOSFET base on its datasheet
  publication-title: Proc Int Future Energy Electron Conf
– ident: ref14
  doi: 10.1109/ECCE.2012.6342164
– ident: ref20
  doi: 10.1109/APEC.2019.8721795
– ident: ref19
  doi: 10.1109/TPEL.2015.2445375
– ident: ref28
  doi: 10.1049/iet-pel.2018.5838
– start-page: 1
  year: 2015
  ident: ref6
  article-title: Comparison of the power losses in 1700V Si IGBT and SiC MOSFET modules including reverse conduction
  publication-title: Proc Eur Conf Power Electron Appl
– ident: ref5
  doi: 10.1109/TIE.2010.2072896
– ident: ref7
  doi: 10.1109/TPEL.2017.2655496
– year: 2020
  ident: ref21
– start-page: 1
  year: 2012
  ident: ref15
  article-title: Cdv/dt induced turn-on in synchronous buck regulators
  publication-title: Proc Appl Manual-Int Rectifier
– ident: ref16
  doi: 10.1109/TIE.2015.2491880
– start-page: 285
  year: 2016
  ident: ref25
  article-title: A switching ringing suppression scheme of SiC MOSFET by active gate drive
  publication-title: Proc Int Power Electron Motion Control Conf
– ident: ref18
  doi: 10.1109/TPEL.2018.2865611
– ident: ref1
  doi: 10.1109/TPEL.2013.2268900
– ident: ref26
  doi: 10.1109/TPEL.2014.2327014
– ident: ref17
  doi: 10.1109/TED.2014.2362657
– ident: ref9
  doi: 10.1109/TPEL.2017.2690938
– ident: ref12
  doi: 10.1109/TPEL.2017.2684094
– ident: ref10
  doi: 10.1109/IPEMC.2016.7512539
– ident: ref13
  doi: 10.1109/INTLEC.2004.1401538
– ident: ref3
  doi: 10.1109/ECMSM.2017.7945876
– ident: ref8
  doi: 10.1109/JESTPE.2018.2877968
– ident: ref11
  doi: 10.1109/TPEL.2012.2195332
– ident: ref29
  doi: 10.1109/TIE.2017.2736500
– ident: ref23
  doi: 10.1109/TIE.2017.2721885
– ident: ref27
  doi: 10.1109/TIE.2017.2719603
– ident: ref24
  doi: 10.1109/TSP.2013.2264054
SSID ssj0014501
Score 2.513444
Snippet A predictive algorithm for accurately determining the crosstalk peaks caused by SiC MOSFET s is proposed in this article, which is very important to better...
SourceID proquest
crossref
ieee
SourceType Aggregation Database
Enrichment Source
Index Database
Publisher
StartPage 2823
SubjectTerms Algorithms
Capacitance
Circuit design
Circuit protection
Crosstalk
Crosstalk peaks
gate-drain capacitance (<named-content xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" content-type="math" xlink:type="simple"> <inline-formula> <tex-math notation="LaTeX"> C_{gd}</tex-math> </inline-formula> </named-content>)
Logic gates
Mathematical analysis
MOSFET
MOSFETs
Nonlinearity
phase-leg configuration
Prediction algorithms
SiC <sc xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">MOSFET s
Silicon carbide
Switches
Title A Predictive Algorithm for Crosstalk Peaks of SiC MOSFET by Considering the Nonlinearity of Gate-Drain Capacitance
URI https://ieeexplore.ieee.org/document/9165969
https://www.proquest.com/docview/2456527795
Volume 36
WOSCitedRecordID wos000583807100035&url=https%3A%2F%2Fcvtisr.summon.serialssolutions.com%2F%23%21%2Fsearch%3Fho%3Df%26include.ft.matches%3Dt%26l%3Dnull%26q%3D
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
journalDatabaseRights – providerCode: PRVIEE
  databaseName: IEEE
  customDbUrl:
  eissn: 1941-0107
  dateEnd: 99991231
  omitProxy: false
  ssIdentifier: ssj0014501
  issn: 0885-8993
  databaseCode: RIE
  dateStart: 19860101
  isFulltext: true
  titleUrlDefault: https://ieeexplore.ieee.org/
  providerName: IEEE
link http://cvtisr.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwlV1NT-MwEB0VxIE98LmIQkE-7GmFl8SN4_hYFRAHKJUAiVtku85SAS1KAxL_nhknrUCskPaWg21ZefbMG489D-CXzyz6MVVwObKCJyLS3Hpj-SgRVsRGjYw0QWxCDQbZ3Z0etuBo8RbGex8un_k_9Bly-aOpe6GjsmOkMlKnegmWlFL1W61FxiCRQeoYN43kGEN0mwxmHOnjm-HpBUaCAgPUOg_3yQcFUZUvlji4l7P1_5vYBqw1NJL1atw3oeUnW_DjQ3HBbSh7bFhSGoYMGus9_p2W4-r-iSFLZX2aF9LuB4Ym8WHGpgW7HvfZ5dX12ekNs29sruOJIzGkiGxQV9QwJHVHrenQjZ-QvATro7t144pWz0-4xf79c94oLHCHbr7iUhoRpYW0OjEJldqLI5_KQlEyr0tqoNaK1Juo0InMCp-lmfMS0YuNR9Ngsu4OLE-mE78LLJYuFnHqBB2QSGQWTtm4i-wgUQ5jvKQN0fyf564pP04qGI95CEMinRNMOcGUNzC14feiy3Nde-O7xtuEy6JhA0kbOnNg82Z3zvKQ7BVKabn37177sCro7kq4a9aB5ap88Qew4l6r8aw8DAvvHRXF0zk
linkProvider IEEE
linkToHtml http://cvtisr.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwlV1RT9swED4xNmnwwNgYosA2P-xpmkfs2kn8WBUQ00qpRCfxFtmuwyqgRWmYtH_PnZNWQ5sm7S0PtmXls---89n3AXwMuUM_lpVcT5zkSiaGu2AdnyjppLDZxGobxSay4TC_ujKjNfi8egsTQoiXz8IX-oy5_MncP9BR2RFSGW1S8wyea6WkaF5rrXIGSkexY9w2mmMU0W1zmCIxR-PRyQBjQYkhapOJe-KFoqzKH7Y4OpjTV_83tW3Yaokk6zXIv4a1MHsDm7-VF9yBqsdGFSViyKSx3u31vJrWP-4Y8lTWp3kh8b5haBRvFmxesstpn51fXJ6ejJn7xZZKnjgSQ5LIhk1NDUtid9Sajt34MQlMsD46XD-taf28he_Yv3_GW40F7tHR11xrK5O01M4oq6jYnkhCqsuM0nld0gN1TqbBJqVROi9DnuY-aMRP2IDGwebdXVifzWdhD5jQXkiReklHJBq5hc-c6CI_UJnHKE91IFn-88K3BchJB-O2iIFIYgqCqSCYihamDnxadblvqm_8q_EO4bJq2ELSgcMlsEW7PxdFTPfKLDN6_--9PsDLs_H5oBh8HX47gA1JN1nizbNDWK-rh_AOXvif9XRRvY-L8BE-mdaA
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=A+Predictive+Algorithm+for+Crosstalk+Peaks+of+SiC+MOSFET+by+Considering+the+Nonlinearity+of+Gate-Drain+Capacitance&rft.jtitle=IEEE+transactions+on+power+electronics&rft.au=Li%2C+Hong&rft.au=Jiang%2C+Yanfeng&rft.au=Qiu%2C+Zhidong&rft.au=Wang%2C+Yuting&rft.date=2021-03-01&rft.pub=The+Institute+of+Electrical+and+Electronics+Engineers%2C+Inc.+%28IEEE%29&rft.issn=0885-8993&rft.eissn=1941-0107&rft.volume=36&rft.issue=3&rft.spage=2823&rft_id=info:doi/10.1109%2FTPEL.2020.3016155&rft.externalDBID=NO_FULL_TEXT
thumbnail_l http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=0885-8993&client=summon
thumbnail_m http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=0885-8993&client=summon
thumbnail_s http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=0885-8993&client=summon