Li, H., Jiang, Y., Qiu, Z., Wang, Y., & Ding, Y. (2021). A Predictive Algorithm for Crosstalk Peaks of SiC MOSFET by Considering the Nonlinearity of Gate-Drain Capacitance. IEEE transactions on power electronics, 36(3), 2823-2834. https://doi.org/10.1109/TPEL.2020.3016155
Chicago-Zitierstil (17. Ausg.)Li, Hong, Yanfeng Jiang, Zhidong Qiu, Yuting Wang, und Yuhang Ding. "A Predictive Algorithm for Crosstalk Peaks of SiC MOSFET by Considering the Nonlinearity of Gate-Drain Capacitance." IEEE Transactions on Power Electronics 36, no. 3 (2021): 2823-2834. https://doi.org/10.1109/TPEL.2020.3016155.
MLA-Zitierstil (9. Ausg.)Li, Hong, et al. "A Predictive Algorithm for Crosstalk Peaks of SiC MOSFET by Considering the Nonlinearity of Gate-Drain Capacitance." IEEE Transactions on Power Electronics, vol. 36, no. 3, 2021, pp. 2823-2834, https://doi.org/10.1109/TPEL.2020.3016155.