High-Sensitivity and Fast-Response Graphene/Crystalline Silicon Schottky Junction-Based Near-IR Photodetectors

Schottky junction near-infrared photodetectors were constructed by combing monolayer graphene (MLG) film and bulk silicon. Notably, the device could operate at zero external voltage bias because of the strong photovoltaic behavior of the MLG/Si Schottky junction, giving rise to high responsivity and...

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Bibliographic Details
Published in:	IEEE electron device letters Vol. 34; no. 10; pp. 1337 - 1339
Main Authors:	Lv, Peng, Zhang, Xiujuan, Zhang, Xiwei, Deng, Wei, Jie, Jiansheng
Format:	Journal Article
Language:	English
Published:	New York, NY IEEE 01.10.2013 Institute of Electrical and Electronics Engineers
Subjects:	Applied sciences Bolometer; infrared, submillimeter wave, microwave and radiowave receivers and detectors Electronics Exact sciences and technology Graphene Infrared, submillimeter wave, microwave and radiowave instruments, equipment and techniques Instruments, apparatus, components and techniques common to several branches of physics and astronomy Junctions Measurements common to several branches of physics and astronomy Metrology, measurements and laboratory procedures near-infrared (NIR) Optoelectronic devices Photoconductivity Photodetectors Physics planar Si Schottky junction Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon Substrates Temperature measurement Time and frequency Infrared detector Time measurement Photodetector Time response Crystalline material Near infrared radiation planar Si Response function Si junctions photodetectors near-infrared (NIR) Graphene High sensitivity Optoelectronic device Schottky junction Zero band gap semiconductors Silicon Room temperature Planar technology
ISSN:	0741-3106, 1558-0563
Online Access:	Get full text
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