i-SRAM: Interleaved Wordlines for Vector Boolean Operations Using SRAMs

The generic approach toward SRAM based in-memory computations has been to activate multiple memory rows simultaneously and read out a logic function of the constituent rows. In general, these schemes introduce errors in computations due to their analog nature, limiting their usage to error-resilient...

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Vydáno v:IEEE transactions on circuits and systems. I, Regular papers Ročník 67; číslo 12; s. 4651 - 4659
Hlavní autoři: Jaiswal, Akhilesh, Agrawal, Amogh, Ali, Mustafa F., Sharmin, Saima, Roy, Kaushik
Médium: Journal Article
Jazyk:angličtina
Vydáno: New York IEEE 01.12.2020
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Témata:
Arrays
binary neural network
Boolean
Boolean algebra
Encryption
In-memory computing
interleaved word-lines
Layout
Logic gates
Machine learning
Neural networks
Proposals
Random access memory
SRAMs
Stability
Static random access memory
Throughput
von Neumann bottleneck
ISSN:1549-8328, 1558-0806
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Shrnutí:The generic approach toward SRAM based in-memory computations has been to activate multiple memory rows simultaneously and read out a logic function of the constituent rows. In general, these schemes introduce errors in computations due to their analog nature, limiting their usage to error-resilient applications such as machine learning. In contrast, in-memory bulk bit-wise Boolean computations are suitable not only for error-resilient applications, but also those that require accurate computations like encryption. Prior works have indeed accomplished such bit-wise computations, however, they require modifications to the normal SRAM read operations leading to degraded read-stability or lower sense-margin. In this paper, we propose interleaving the word-lines (i-SRAM) as the basic approach for embedding bit-wise computations in SRAM arrays. Further, our i-SRAM read operation is identical to the normal memory read operation without loss of read-robustness or sense-margin. Even at deeply scaled nodes, as long as normal SRAM read stability is ascertained, the presented proposal works equally well. As opposed to prior works, this is a key benefactor in allowing the proposal to be seamlessly integrated in state-of-the-art SRAM compilers. We propose different configurations of i-SRAM for 6T and 8T-bit-cells, with minimal area overhead. We further demonstrate upto <inline-formula> <tex-math notation="LaTeX">\sim 2 \times </tex-math></inline-formula> improvement in energy and <inline-formula> <tex-math notation="LaTeX">\sim 8 \times </tex-math></inline-formula> improvement in throughput for a binary neural network (BNN) and <inline-formula> <tex-math notation="LaTeX">\sim 3.5 \times </tex-math></inline-formula> improvement in energy and <inline-formula> <tex-math notation="LaTeX">\sim 3 \times </tex-math></inline-formula> improvement in throughput for AES encryption using the proposed i-SRAM in a modified von-Neuamnn machine.
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ISSN:1549-8328
1558-0806
DOI:10.1109/TCSI.2020.3005783