A Multi-Time-Step Finite Element Algorithm for 3-D Simulation of Coupled Drift-Diffusion Reaction Process in Total Ionizing Dose Effect

In order to study the total ionizing dose degradation and enhanced low dose rate sensitivity effect for semiconductor devices in the space environment, we simulate the drift-diffusion-reaction processes in a 3-dimensional SiO 2 -Si system. Since the time scale of the drift-diffusion processes is muc...

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Vydáno v:	IEEE transactions on semiconductor manufacturing Ročník 31; číslo 1; s. 183 - 189
Hlavní autoři:	Xu, Jingjie, Ma, Zhaocan, Li, Hongliang, Song, Yu, Zhang, Linbo, Lu, Benzhuo
Médium:	Journal Article
Jazyk:	angličtina
Vydáno:	New York IEEE 01.02.2018 The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Témata:	Aerospace environments Charge carrier processes Chemical reactions Chemicals Computer simulation Diffusion Dosage Drift Drift-diffusion reaction ELDRS Electrodiffusion Finite element method Logic gates Mathematical analysis Mathematical model multi-time-step algorithm Numerical models Ordinary differential equations Partial differential equations Robustness (mathematics) Semiconductor devices Sensitivity Silicon dioxide Simulation Solid modeling STEM TID
ISSN:	0894-6507, 1558-2345
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