Effects of Breakdown Voltage on Single-Event Burnout Tolerance of High-Voltage SiC Power MOSFETs

Ion- and terrestrial neutron-induced single-event burnout (SEB) data indicate that a thicker, more lightly doped epitaxial (epi) region significantly increases the threshold at which ion-induced SEB occurs in silicon carbide (SiC) power MOSFETs and junction barrier Schottky (JBS) diodes. Simulations...

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Bibliographic Details
Published in:IEEE transactions on nuclear science Vol. 68; no. 7; pp. 1430 - 1435
Main Authors: Ball, D. R., Galloway, K. F., Johnson, R. A., Alles, M. L., Sternberg, A. L., Witulski, A. F., Reed, R. A., Schrimpf, R. D., Hutson, J. M., Lauenstein, J.-M.
Format: Journal Article
Language:English
Published: New York IEEE 01.07.2021
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects:
Breakdown
Burnout
Circuit design
Density measurement
Diode
Doping
Epitaxial growth
heavy ion
Ions
MOSFET
MOSFETs
power
Power system measurements
Schottky diodes
Silicon carbide
silicon carbide (SiC)
single-event burnout (SEB)
Voltage
ISSN:0018-9499, 1558-1578
Online Access:Get full text
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Summary:Ion- and terrestrial neutron-induced single-event burnout (SEB) data indicate that a thicker, more lightly doped epitaxial (epi) region significantly increases the threshold at which ion-induced SEB occurs in silicon carbide (SiC) power MOSFETs and junction barrier Schottky (JBS) diodes. Simulations indicate that the reduction of power dissipation along the core of the ion track is responsible for the increased robustness of the devices that have higher breakdown voltage ratings. Implications for circuit design show that using a 3300-V power MOSFET provides a significant increase in SEB threshold margin compared to a 1200-V MOSFET, with minor impact on power dissipation during normal operation.
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ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2021.3079846