Effects of Breakdown Voltage on Single-Event Burnout Tolerance of High-Voltage SiC Power MOSFETs

Ion- and terrestrial neutron-induced single-event burnout (SEB) data indicate that a thicker, more lightly doped epitaxial (epi) region significantly increases the threshold at which ion-induced SEB occurs in silicon carbide (SiC) power MOSFETs and junction barrier Schottky (JBS) diodes. Simulations...

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Bibliographic Details
Published in:	IEEE transactions on nuclear science Vol. 68; no. 7; pp. 1430 - 1435
Main Authors:	Ball, D. R., Galloway, K. F., Johnson, R. A., Alles, M. L., Sternberg, A. L., Witulski, A. F., Reed, R. A., Schrimpf, R. D., Hutson, J. M., Lauenstein, J.-M.
Format:	Journal Article
Language:	English
Published:	New York IEEE 01.07.2021 The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects:	Breakdown Burnout Circuit design Density measurement Diode Doping Epitaxial growth heavy ion Ions MOSFET MOSFETs power Power system measurements Schottky diodes Silicon carbide silicon carbide (SiC) single-event burnout (SEB) Voltage
ISSN:	0018-9499, 1558-1578
Online Access:	Get full text
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