Disclosing the nature of vacancy defects in α-Ag2WO4
•Alteration of α-Ag2WO4 defects as a function of temperature.•Photoluminescence spectroscopy as a tool to evaluate oxygen vacancies.•Impedance spectroscopy and PALS as a tool to evaluate complex vacancies. Defects at semiconductors with electron acceptor and donor sites govern the electronic and opt...
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| Veröffentlicht in: | Materials research bulletin Jg. 164; S. 112252 |
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| Sprache: | Englisch |
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01.08.2023
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| Abstract | •Alteration of α-Ag2WO4 defects as a function of temperature.•Photoluminescence spectroscopy as a tool to evaluate oxygen vacancies.•Impedance spectroscopy and PALS as a tool to evaluate complex vacancies.
Defects at semiconductors with electron acceptor and donor sites govern the electronic and optoelectronic applications due to their unique electronic properties. This work provides deep insight into the nature of defects and the conduction mechanism in α-Ag2WO4. To this aim, a detailed analysis of the results of XRD with Rietveld refinements, FE-SEM images, and measurements of different spectroscopies (impedance, positron annihilation lifetime, and photoluminescence) are carried out on α-Ag2WO4 samples synthesized by a simple co-precipitation method. Two types of vacancy defects: cationic O-vacancies, and anionic Ag or Ag–O vacancy complexes are elucidated with a Schottky p-type potential barrier. The results indicate that the Ag vacancies remain constant during thermal treatment, while an opposite effect is found for the oxygen vacancies. This behavior governs the multifunctional properties of α-Ag2WO4 semiconductors via a tunneling plus thermionic conduction mechanism.
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| AbstractList | •Alteration of α-Ag2WO4 defects as a function of temperature.•Photoluminescence spectroscopy as a tool to evaluate oxygen vacancies.•Impedance spectroscopy and PALS as a tool to evaluate complex vacancies.
Defects at semiconductors with electron acceptor and donor sites govern the electronic and optoelectronic applications due to their unique electronic properties. This work provides deep insight into the nature of defects and the conduction mechanism in α-Ag2WO4. To this aim, a detailed analysis of the results of XRD with Rietveld refinements, FE-SEM images, and measurements of different spectroscopies (impedance, positron annihilation lifetime, and photoluminescence) are carried out on α-Ag2WO4 samples synthesized by a simple co-precipitation method. Two types of vacancy defects: cationic O-vacancies, and anionic Ag or Ag–O vacancy complexes are elucidated with a Schottky p-type potential barrier. The results indicate that the Ag vacancies remain constant during thermal treatment, while an opposite effect is found for the oxygen vacancies. This behavior governs the multifunctional properties of α-Ag2WO4 semiconductors via a tunneling plus thermionic conduction mechanism.
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| ArticleNumber | 112252 |
| Author | Aldao, C.M. Simões, A.Z. Longo, E. Assis, M. Macchi, C.E. Teodoro, M.D. Somoza, A. Ponce, M.A. Andrés, J. Gouveia, A.F. Castro, M.S. Moura, F. Buono, C. Ortega, P.P. |
| Author_xml | – sequence: 1 givenname: M. surname: Assis fullname: Assis, M. email: marcelostassis@gmail.com organization: CDMF, Federal University of São Carlos (UFSCar), São Carlos 13565-905, Brazil – sequence: 2 givenname: M.S. surname: Castro fullname: Castro, M.S. organization: Institute of Materials Science and Technology (INTEMA), University of Mar del Plata and National Research Council (CONICET), Av. Colón 10850, Mar del Plata B7606 FWV, Argentina – sequence: 3 givenname: C.M. surname: Aldao fullname: Aldao, C.M. organization: Institute of Scientific and Technological Research in Electronics (ICYTE), University of Mar del Plata and National Research Council (CONICET), Juan B. Justo 4302, Mar del Plata B7608FDQ, Argentina – sequence: 4 givenname: C. surname: Buono fullname: Buono, C. organization: Institute of Scientific and Technological Research in Electronics (ICYTE), University of Mar del Plata and National Research Council (CONICET), Juan B. Justo 4302, Mar del Plata B7608FDQ, Argentina – sequence: 5 givenname: P.P. surname: Ortega fullname: Ortega, P.P. organization: School of Engineering, São Paulo State University (UNESP), Av. Dr. Ariberto Pereira da Cunha 333, Portal das Colinas, Guaratinguetá 12516-410, Brazil – sequence: 6 givenname: M.D. surname: Teodoro fullname: Teodoro, M.D. organization: Department of Physics, Federal University of São Carlos (UFSCar), São Carlos 13565-905, Brazil – sequence: 7 givenname: J. surname: Andrés fullname: Andrés, J. organization: Department of Physical and Analytical Chemistry, University Jaume I (UJI), Castellón 12071, Spain – sequence: 8 givenname: A.F. surname: Gouveia fullname: Gouveia, A.F. organization: Department of Physical and Analytical Chemistry, University Jaume I (UJI), Castellón 12071, Spain – sequence: 9 givenname: A.Z. surname: Simões fullname: Simões, A.Z. organization: School of Engineering, São Paulo State University (UNESP), Av. Dr. Ariberto Pereira da Cunha 333, Portal das Colinas, Guaratinguetá 12516-410, Brazil – sequence: 10 givenname: E. surname: Longo fullname: Longo, E. organization: CDMF, Federal University of São Carlos (UFSCar), São Carlos 13565-905, Brazil – sequence: 11 givenname: C.E. surname: Macchi fullname: Macchi, C.E. organization: Institute of Materials Physics of Tandil - IFIMAT (UNCPBA) and CIFICEN (UNCPBA-CICPBA-CONICET), Pinto 399, Tandil B7000GHG, Argentina – sequence: 12 givenname: A. surname: Somoza fullname: Somoza, A. organization: Institute of Materials Physics of Tandil - IFIMAT (UNCPBA) and CIFICEN (UNCPBA-CICPBA-CONICET), Pinto 399, Tandil B7000GHG, Argentina – sequence: 13 givenname: F. surname: Moura fullname: Moura, F. organization: Advanced Materials Interdisciplinary Laboratory, Federal University of Itajubá, Unifei – Campus Itabira, MG, Brazil – sequence: 14 givenname: M.A. surname: Ponce fullname: Ponce, M.A. organization: CDMF, Federal University of São Carlos (UFSCar), São Carlos 13565-905, Brazil |
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