All‐Electrical Programmable Domain‐Wall Spin Logic‐In‐Memory Device

Control of spins by spin–orbit torque brings novel strategies to design spintronic devices with potentially high impact in data storage and logic‐in‐memory computing architectures. Although various attempts have been proposed to avoid the participation of magnetic field during magnetization switchin...

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Bibliographic Details

Published in:	Advanced electronic materials Vol. 8; no. 10
Main Authors:	Wang, Weiyang, Sheng, Yu, Zheng, Yuanhui, Ji, Yang, Wang, Kaiyou
Format:	Journal Article
Language:	English
Published:	01.10.2022
Subjects:	domain walls Dzyaloshinskii–Moriya interactions field‐free switching spin logic‐in‐memory spin–orbit torque
ISSN:	2199-160X, 2199-160X
Online Access:	Get full text
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