All‐Electrical Programmable Domain‐Wall Spin Logic‐In‐Memory Device

Control of spins by spin–orbit torque brings novel strategies to design spintronic devices with potentially high impact in data storage and logic‐in‐memory computing architectures. Although various attempts have been proposed to avoid the participation of magnetic field during magnetization switchin...

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Bibliographic Details
Published in:	Advanced electronic materials Vol. 8; no. 10
Main Authors:	Wang, Weiyang, Sheng, Yu, Zheng, Yuanhui, Ji, Yang, Wang, Kaiyou
Format:	Journal Article
Language:	English
Published:	01.10.2022
Subjects:	domain walls Dzyaloshinskii–Moriya interactions field‐free switching spin logic‐in‐memory spin–orbit torque
ISSN:	2199-160X, 2199-160X
Online Access:	Get full text
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Summary:	Control of spins by spin–orbit torque brings novel strategies to design spintronic devices with potentially high impact in data storage and logic‐in‐memory computing architectures. Although various attempts have been proposed to avoid the participation of magnetic field during magnetization switching for realizing multifunctional spin logic devices, simpler and more feasible approaches are still strongly desired. Here, field‐free current‐induced magnetization switching is achieved through magnetic domain wall (DW) motion in a dual‐channels device, where the chiral Néel DW is stabilized by the strong Dzyaloshinskii–Moriya interaction in Pt/Co/Ru asymmetric structure. By electrically programming the initial magnetization states of the device with two opposite switching modes, four Boolean logic gates of AND, NAND, OR, and NOR are demonstrated. This work demonstrates that ingenious geometry design can be important for developing the spin logic devices and in‐memory computing architectures. All‐electrical programmable domain‐wall spin logic‐in‐memory device with dual conductive channels is demonstrated. Field‐free current‐induced magnetization switching is achieved through current‐driven domain wall reciprocating motion. Furthermore, four logic gates of AND, OR, NAND, and NOR are demonstrated in a single device, which is encoded in switching chirality (clockwise/anticlockwise) and initial magnetization state (up/down).
ISSN:	2199-160X 2199-160X
DOI:	10.1002/aelm.202200412