Phosphorus diffusion from a spin-on doped glass (SOD) source during rapid thermal annealing

Limiting thermal exposure time using rapid thermal processing (RTP) has emerged as a promising simplified process for microelectronics applications and for manufacturing of terrestrial solar cells in a continuous way. Especially, rapid thermal diffusion (RTD) of phosphorus from doped oxide films (SO...

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Vydáno v:	Materials science in semiconductor processing Ročník 1; číslo 3; s. 231 - 236
Hlavní autoři:	Mathiot, D., Lachiq, A., Slaoui, A., Noël, S., Muller, J.C., Dubois, C.
Médium:	Journal Article
Jazyk:	angličtina
Vydáno:	Elsevier Ltd 01.12.1998
ISSN:	1369-8001, 1873-4081
On-line přístup:	Získat plný text
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Popis
Shrnutí:	Limiting thermal exposure time using rapid thermal processing (RTP) has emerged as a promising simplified process for microelectronics applications and for manufacturing of terrestrial solar cells in a continuous way. Especially, rapid thermal diffusion (RTD) of phosphorus from doped oxide films (SOD) was extensively used for the emitter formation purpose but few work concerned the diffusion mechanism. Here we investigate more in details the diffusion kinetics of phosphorus after rapid thermal annealing of P-SOD coated silicon samples. The observed enhanced distribution of phosphorus after RTD is discussed based on the dopant sources and processing conditions. Comparisons between experimental profiles and simulation results using up to date phosphorus diffusion models allow us to discriminate between various possible enhancement mechanisms.
ISSN:	1369-8001 1873-4081
DOI:	10.1016/S1369-8001(98)00045-6