Carrier confinement in Ge/Si quantum dots grown with an intermediate ultrathin oxide layer

We present computational results for strain effects on charge carrier confinement in Ge Si[sub 1-x] quantum dots (QDs) grown on an oxidized Si surface. The strain and free carrier probability density distributions are obtained using the continuum elasticity theory and the effective-mass approximatio...

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Veröffentlicht in:Physical review. B, Condensed matter and materials physics Jg. 85; H. 7
Hauptverfasser: Kuryliuk, V., Korotchenkov, O., Cantarero, A.
Format: Journal Article
Sprache:Englisch
Veröffentlicht: 08.02.2012
Schlagworte:
Carriers
Charge carriers
Confinement
Germanium
Mathematical analysis
Quantum dots
Silicon
Strain
ISSN:1098-0121, 1550-235X
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Zusammenfassung:We present computational results for strain effects on charge carrier confinement in Ge Si[sub 1-x] quantum dots (QDs) grown on an oxidized Si surface. The strain and free carrier probability density distributions are obtained using the continuum elasticity theory and the effective-mass approximation implemented by a finite-element modeling scheme. Since, to our knowledge, there are no data on carrier confinement for Ge QDs deposited on oxidized Si surfaces, these results might be applicable to functional devices utilizing separated electrons and holes such as photovoltaic devices, spin transistors, and quantum computing components. The use of hemisphere QDs placed on oxidized Si rather than pyramid dots grown on bare Si may help to confine charge carriers deeper inside the Ge/Si hetero-structure in order to reduce the influence of surfaces and interfaces on transport properties of the structures.
Bibliographie:ObjectType-Article-1
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ISSN:1098-0121
1550-235X
DOI:10.1103/PhysRevB.85.075406