Carrier confinement in Ge/Si quantum dots grown with an intermediate ultrathin oxide layer

We present computational results for strain effects on charge carrier confinement in Ge Si[sub 1-x] quantum dots (QDs) grown on an oxidized Si surface. The strain and free carrier probability density distributions are obtained using the continuum elasticity theory and the effective-mass approximatio...

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Bibliographic Details

Published in:	Physical review. B, Condensed matter and materials physics Vol. 85; no. 7
Main Authors:	Kuryliuk, V., Korotchenkov, O., Cantarero, A.
Format:	Journal Article
Language:	English
Published:	08.02.2012
Subjects:	Carriers Charge carriers Confinement Germanium Mathematical analysis Quantum dots Silicon Strain
ISSN:	1098-0121, 1550-235X
Online Access:	Get full text
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