APA (7th ed.) Citation

Kuryliuk, V., Korotchenkov, O., & Cantarero, A. (2012). Carrier confinement in Ge/Si quantum dots grown with an intermediate ultrathin oxide layer. Physical review. B, Condensed matter and materials physics, 85(7), . https://doi.org/10.1103/PhysRevB.85.075406

Chicago Style (17th ed.) Citation

Kuryliuk, V., O. Korotchenkov, and A. Cantarero. "Carrier Confinement in Ge/Si Quantum Dots Grown with an Intermediate Ultrathin Oxide Layer." Physical Review. B, Condensed Matter and Materials Physics 85, no. 7 (2012). https://doi.org/10.1103/PhysRevB.85.075406.

MLA (9th ed.) Citation

Kuryliuk, V., et al. "Carrier Confinement in Ge/Si Quantum Dots Grown with an Intermediate Ultrathin Oxide Layer." Physical Review. B, Condensed Matter and Materials Physics, vol. 85, no. 7, 2012, https://doi.org/10.1103/PhysRevB.85.075406.