Magnetic-field- and temperature-dependent spin relaxation of divacancy spins in SiC

In recent years, spin defects in SiC have become important systems for quantum information. In this work, the magnetic-field- and temperature-dependent spin relaxation of divacancy spins in 4H-SiC is experimentally studied. We first measure the spin relaxation time as the magnetic field varies from...

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Vydáno v:Optics letters Ročník 50; číslo 18; s. 5742
Hlavní autoři: Guo, Pei-Jie, Zhou, Hao-Jie, Wang, Tian-Ke, Wang, Jun-Feng
Médium: Journal Article
Jazyk:angličtina
Vydáno: United States 15.09.2025
ISSN:1539-4794, 1539-4794
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Shrnutí:In recent years, spin defects in SiC have become important systems for quantum information. In this work, the magnetic-field- and temperature-dependent spin relaxation of divacancy spins in 4H-SiC is experimentally studied. We first measure the spin relaxation time as the magnetic field varies from 43 G to 640 G and find that significantly decreases at magnetic field values near 482 G and 241 G due to the cross-relaxation with the electric and nuclear spin baths. We then investigate the temperature-dependent relaxation and coherence time . The results show that both and decrease as the temperature increases from 295 K to 458 K. The experiments provide the basis for understanding the spin relaxation property of divacancy spins, which is useful for the spin relaxation-related quantum technologies.
Bibliografie:ObjectType-Article-1
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ISSN:1539-4794
1539-4794
DOI:10.1364/OL.571225