Influence of Electromagnetic Field on Decoherence in Impurity Center Semiconductor Quantum Dot by Confined Spherical Gaussian Potential

The dependence of the temperature and electromagnetic field on the decoherence of quantum superposition states in a donor-center quantum dot with a double-parametric spherical Gaussian confinement potential is investigated based on the Lee-low-pines unitary transformation. The energies and wave func...

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Vydáno v:International journal of theoretical physics Ročník 61; číslo 3
Hlavní autor: Xin, Wei
Médium: Journal Article
Jazyk:angličtina
Vydáno: New York Springer US 01.03.2022
Springer Nature B.V
Témata:
Electromagnetic fields
Electromagnetism
Elementary Particles
Mathematical analysis
Mathematical and Computational Physics
Measurement methods
Physics
Physics and Astronomy
Quantum dots
Quantum Field Theory
Quantum mechanics
Quantum Physics
Qubits (quantum computing)
Temperature dependence
Theoretical
Transition probabilities
Wave functions
Spherical Gaussian confinement potential
Transition probability
Decoherence
Donor-center quantum dot
Decay time
ISSN:0020-7748, 1572-9575
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Shrnutí:The dependence of the temperature and electromagnetic field on the decoherence of quantum superposition states in a donor-center quantum dot with a double-parametric spherical Gaussian confinement potential is investigated based on the Lee-low-pines unitary transformation. The energies and wave functions of the ground state and the first excited state of the system are derived by using the Pekar type variational method. Then a superposition state of a two-state system is constructed. Two measures are introduced to quantify the decoherence of quantum superposition states: the ground-state decay time (lifetime) and the excited transition probability. The laws and mechanisms of the effects of the materials’ inherent properties, such as the dielectric constant ratio and the electron-phonon coupling constant, and environmental factors like temperature and electromagnetic field on the decoherence of superposition states are revealed through numerical calculation. This work improves the measurement method of the decoherence of superposition states, moreover, makes helpful exploration of a new scheme to suppress the decoherence of the qubit of the semiconductor quantum dot.
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ISSN:0020-7748
1572-9575
DOI:10.1007/s10773-022-05070-5