APA (7th ed.) Citation

Ghosh, R., Provias, A., Karl, A., Wilhelmer, C., Knobloch, T., Davoudi, M. R., . . . Grasser, T. (2025). Theoretical insights into the impact of border and interface traps on hysteresis in monolayer MoS2 FETs. Microelectronic engineering, 299, 112333. https://doi.org/10.1016/j.mee.2025.112333

Chicago Style (17th ed.) Citation

Ghosh, Rittik, Alexandros Provias, Alexander Karl, Christoph Wilhelmer, Theresia Knobloch, Mohammad Rasool Davoudi, Seyed Mehdi Sattari-Esfahlan, Dominic Waldhör, and Tibor Grasser. "Theoretical Insights into the Impact of Border and Interface Traps on Hysteresis in Monolayer MoS2 FETs." Microelectronic Engineering 299 (2025): 112333. https://doi.org/10.1016/j.mee.2025.112333.

MLA (9th ed.) Citation

Ghosh, Rittik, et al. "Theoretical Insights into the Impact of Border and Interface Traps on Hysteresis in Monolayer MoS2 FETs." Microelectronic Engineering, vol. 299, 2025, p. 112333, https://doi.org/10.1016/j.mee.2025.112333.