Analysis of Degradation Mechanisms of Gate Dielectrics Based on SiO2 in MOS Transistors

The current mathematical models of gate dielectric degradation are used to determine the value of a device’s operating time to failure depending on its internal properties and operating conditions. These models significantly reduce the time and material costs for testing and processing large amounts...

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Published in:	Semiconductors (Woodbury, N.Y.) Vol. 55; no. 13; pp. 1045 - 1048
Main Authors:	Eliseeva, D. A., Safonov, S. O.
Format:	Journal Article
Language:	English
Published:	Moscow Pleiades Publishing 01.12.2021 Springer Nature B.V
Subjects:	Degradation Dielectrics Electric fields Elements of Integrated Electronics Magnetic Materials Magnetism Mathematical models MOS devices Physics Physics and Astronomy Semiconductor devices Silicon dioxide Thickness Transistors time-dependent dielectric breakdown MOS transistor gate dielectric reliability
ISSN:	1063-7826, 1090-6479
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Abstract	The current mathematical models of gate dielectric degradation are used to determine the value of a device’s operating time to failure depending on its internal properties and operating conditions. These models significantly reduce the time and material costs for testing and processing large amounts of experimental data. Here, the gate dielectrics based on SiO 2 in n - and p -channel MOS transistors are investigated. It is found that, when exposed to an electric field, the gate dielectric with the thickness of 5.3 nm most likely degrades according to the thermochemical model ( E -model), and the one with a thickness of 7 nm, according to the anode hole injection model (1/ E -model). The coefficients are calculated, and the analysis of mathematical models is carried out, which makes it possible to determine the lifetime of gate dielectrics based on SiO 2 7 nm thick in n - and p -channel MOS transistors and those that are 5.3 nm thick in n -channel MOS transistors at different values of their area, operating voltage, and temperature. This study can serve as a method for monitoring and determining the quality of the gate dielectrics of the manufactured MOS transistors.
AbstractList	The current mathematical models of gate dielectric degradation are used to determine the value of a device’s operating time to failure depending on its internal properties and operating conditions. These models significantly reduce the time and material costs for testing and processing large amounts of experimental data. Here, the gate dielectrics based on SiO2 in n- and p-channel MOS transistors are investigated. It is found that, when exposed to an electric field, the gate dielectric with the thickness of 5.3 nm most likely degrades according to the thermochemical model (E-model), and the one with a thickness of 7 nm, according to the anode hole injection model (1/E-model). The coefficients are calculated, and the analysis of mathematical models is carried out, which makes it possible to determine the lifetime of gate dielectrics based on SiO2 7 nm thick in n- and p-channel MOS transistors and those that are 5.3 nm thick in n-channel MOS transistors at different values of their area, operating voltage, and temperature. This study can serve as a method for monitoring and determining the quality of the gate dielectrics of the manufactured MOS transistors. The current mathematical models of gate dielectric degradation are used to determine the value of a device’s operating time to failure depending on its internal properties and operating conditions. These models significantly reduce the time and material costs for testing and processing large amounts of experimental data. Here, the gate dielectrics based on SiO 2 in n - and p -channel MOS transistors are investigated. It is found that, when exposed to an electric field, the gate dielectric with the thickness of 5.3 nm most likely degrades according to the thermochemical model ( E -model), and the one with a thickness of 7 nm, according to the anode hole injection model (1/ E -model). The coefficients are calculated, and the analysis of mathematical models is carried out, which makes it possible to determine the lifetime of gate dielectrics based on SiO 2 7 nm thick in n - and p -channel MOS transistors and those that are 5.3 nm thick in n -channel MOS transistors at different values of their area, operating voltage, and temperature. This study can serve as a method for monitoring and determining the quality of the gate dielectrics of the manufactured MOS transistors.
Author	Eliseeva, D. A. Safonov, S. O.
Author_xml	– sequence: 1 givenname: D. A. surname: Eliseeva fullname: Eliseeva, D. A. email: xoma2525@mail.ru organization: National Research University (MIET), OOO NM-Tech – sequence: 2 givenname: S. O. surname: Safonov fullname: Safonov, S. O. organization: OOO NM-Tech
BookMark	eNp1kEtPAjEUhRuDiYD-AHdNXI_2Ne10iSBogmEBxuWk02mxBFpshwX_3iImLoyr-zjfOcm9A9DzwRsAbjG6x5iyhyVGnIqKcJJHhEp2AfoYSVRwJmTv1HNanPQrMEhpgxDGVcn64H3k1faYXILBwolZR9WqzgUPX43-UN6l3bcyU52BE2e2RnfR6QQfVTItzNzSLQh0mV8s4Soqn6O6ENM1uLRqm8zNTx2Ct-nTavxczBezl_FoXmjCq66QVSNKhCguiWlbjqwUmhBmK6wFQ8gI3GBJGqu0tI0QjLSM550pSWtLahkdgrtz7j6Gz4NJXb0Jh5hvSjXhjFBBJaWZwmdKx5BSNLbeR7dT8VhjVJ_-V__5X_aQsydl1q9N_E3-3_QFSshxmQ
Cites_doi	10.1109/16.477595 10.1063/1.123228 10.1016/S0038-1101(02)00151-X 10.1109/IEDM.2012.6479123 10.1063/1.1565180 10.1007/978-3-319-43220-5
ContentType	Journal Article
Copyright	Pleiades Publishing, Ltd. 2021. ISSN 1063-7826, Semiconductors, 2021, Vol. 55, No. 13, pp. 1045–1048. © Pleiades Publishing, Ltd., 2021. ISSN 1063-7826, Semiconductors, 2021. © Pleiades Publishing, Ltd., 2021. Russian Text © The Author(s), 2020, published in Izvestiya Vysshikh Uchebnykh Zavedenii, Elektronika, 2020, Vol. 25, No. 6, pp. 517–524.
Copyright_xml	– notice: Pleiades Publishing, Ltd. 2021. ISSN 1063-7826, Semiconductors, 2021, Vol. 55, No. 13, pp. 1045–1048. © Pleiades Publishing, Ltd., 2021. ISSN 1063-7826, Semiconductors, 2021. © Pleiades Publishing, Ltd., 2021. Russian Text © The Author(s), 2020, published in Izvestiya Vysshikh Uchebnykh Zavedenii, Elektronika, 2020, Vol. 25, No. 6, pp. 517–524.
DBID	AAYXX CITATION JQ2
DOI	10.1134/S1063782621130054
DatabaseName	CrossRef ProQuest Computer Science Collection
DatabaseTitle	CrossRef ProQuest Computer Science Collection
DatabaseTitleList	ProQuest Computer Science Collection
DeliveryMethod	fulltext_linktorsrc
Discipline	Engineering Physics
EISSN	1090-6479
EndPage	1048
ExternalDocumentID	10_1134_S1063782621130054
GroupedDBID	-5F -5G -BR -EM -Y2 -~C -~X .VR 06D 0R~ 0VY 123 1N0 29~ 2J2 2JN 2JY 2KG 2KM 2LR 2VQ 2~H 30V 4.4 408 40D 40E 5VS 6NX 8TC 8UJ 95- 95. 95~ 96X AAAVM AABHQ AACDK AAHNG AAIAL AAJBT AAJKR AANZL AARHV AARTL AASML AATNV AATVU AAUYE AAWCG AAYIU AAYQN AAYTO AAYZH ABAKF ABBBX ABDBF ABDZT ABECU ABEFU ABFTD ABFTV ABHLI ABHQN ABJNI ABJOX ABKCH ABKTR ABMNI ABMQK ABNWP ABQBU ABQSL ABSXP ABTEG ABTHY ABTKH ABTMW ABULA ABWNU ABXPI ACAOD ACBXY ACDTI ACGFS ACHSB ACHXU ACKNC ACMDZ ACMLO ACOKC ACOMO ACPIV ACUHS ACZOJ ADHHG ADHIR ADINQ ADKNI ADKPE ADMLS ADRFC ADTPH ADURQ ADYFF ADZKW AEBTG AEFQL AEGAL AEGNC AEJHL AEJRE AEKMD AEMSY AENEX AEOHA AEPYU AETLH AEVLU AEXYK AFBBN AFFNX AFGCZ AFLOW AFQWF AFWTZ AFZKB AGAYW AGDGC AGJBK AGMZJ AGQMX AGRTI AGWIL AGWZB AGYKE AHAVH AHBYD AHSBF AHYZX AIAKS AIGIU AIIXL AILAN AITGF AJBLW AJRNO ALMA_UNASSIGNED_HOLDINGS ALWAN AMKLP AMXSW AMYLF AMYQR AOCGG ARMRJ ASPBG AVWKF AXYYD AZFZN B-. B0M BA0 BDATZ BGNMA BSONS CAG COF CS3 CSCUP DDRTE DNIVK DPUIP DU5 EAD EAP EAS EBLON EBS EIOEI EJD EMK EPL ESBYG EST ESX FEDTE FERAY FFXSO FIGPU FINBP FNLPD FRRFC FSGXE FWDCC GGCAI GGRSB GJIRD GNWQR GQ6 GQ7 H13 HF~ HG6 HMJXF HRMNR HVGLF HZ~ H~9 I-F IAO IJ- IKXTQ ITC IWAJR IXD I~X I~Z J-C JBSCW JZLTJ KOV L8X LLZTM M4Y MA- N2Q NB0 NPVJJ NQJWS NU0 O9- O93 O9J P2P P9T PF0 PT4 QOS R89 R9I RIG RNS ROL RSV S16 S1Z S27 S3B SAP SDH SHX SISQX SJYHP SNE SNPRN SNX SOHCF SOJ SPH SPISZ SRMVM SSLCW STPWE SZN T13 TSG TUC TUS UG4 UOJIU UTJUX UZXMN VC2 VCL VFIZW VIT W23 W48 WK8 XU3 YLTOR Z7R Z7S Z7V Z7X Z7Y Z7Z Z83 Z88 ZMTXR ~8M ~A9 AAPKM AAYXX ABDBE ABFSG ABJCF ABRTQ ACSTC ADHKG AEZWR AFDZB AFFHD AFHIU AFKRA AFOHR AGQPQ AHPBZ AHWEU AIXLP ARAPS ATHPR BENPR BGLVJ CCPQU CITATION HCIFZ K7- KB. M7S PDBOC PHGZM PHGZT PQGLB PTHSS JQ2
ID	FETCH-LOGICAL-c268t-98b75003152edd60f97c224f81c7400e71b192bfac9fb7742d4671be52df53f43
IEDL.DBID	RSV
ISICitedReferencesCount	0
ISICitedReferencesURI	http://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=Summon&SrcAuth=ProQuest&DestLinkType=CitingArticles&DestApp=WOS_CPL&KeyUT=000744036300005&url=https%3A%2F%2Fcvtisr.summon.serialssolutions.com%2F%23%21%2Fsearch%3Fho%3Df%26include.ft.matches%3Dt%26l%3Dnull%26q%3D
ISSN	1063-7826
IngestDate	Thu Sep 25 00:39:53 EDT 2025 Sat Nov 29 05:42:39 EST 2025 Fri Feb 21 02:47:27 EST 2025
IsPeerReviewed	true
IsScholarly	true
Issue	13
Keywords	time-dependent dielectric breakdown MOS transistor gate dielectric reliability
Language	English
LinkModel	DirectLink
MergedId	FETCHMERGED-LOGICAL-c268t-98b75003152edd60f97c224f81c7400e71b192bfac9fb7742d4671be52df53f43
Notes	ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 14
PQID	2642373933
PQPubID	2043677
PageCount	4
ParticipantIDs	proquest_journals_2642373933 crossref_primary_10_1134_S1063782621130054 springer_journals_10_1134_S1063782621130054
PublicationCentury	2000
PublicationDate	2021-12-01
PublicationDateYYYYMMDD	2021-12-01
PublicationDate_xml	– month: 12 year: 2021 text: 2021-12-01 day: 01
PublicationDecade	2020
PublicationPlace	Moscow
PublicationPlace_xml	– name: Moscow – name: New York
PublicationTitle	Semiconductors (Woodbury, N.Y.)
PublicationTitleAbbrev	Semiconductors
PublicationYear	2021
Publisher	Pleiades Publishing Springer Nature B.V
Publisher_xml	– name: Pleiades Publishing – name: Springer Nature B.V
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References_xml	– reference: RosenbaumE.KingJ. C.HuC.IEEE Trans. Electron Dev.199643701996ITED...43...70R10.1109/16.477595 – reference: WuB.Time Dependent Breakdown of Gate Oxide and Prediction of Oxide Gate Lifetime2012San FranciscoSan Francisco State Univ. – reference: E. Wu, in Proceedings of the 47th Annual International Reliability Physics Symposium, Montreal, 2009 (2009), p. 708. – reference: E. Wu and J. Suñé, in IEEE Proceedings of 16th IPFA, China, 2009 (2009), p. 1. – reference: WhiteM.BernsteinJ.JPL Publ. No. 08-5 2/082008Pasadena, CAJET Propuls. Labor., California Inst. Technol – reference: WuE.SuñéJ.LaiW. L.Solid-State Electron.20024617872002SSEle..46.1787W10.1016/S0038-1101(02)00151-X – reference: JEDEC Standard JESD92 (2003). – reference: A. Strong, E. Wu, R. Vollertsen, et al., IEEE Press Ser. Microelectron. Syst., 209 (2009). – reference: M. Choudhury, V. Chandra, and K. Mohanram, in Proceedings of the Conference on Design, Automation and Test in Europe DATE 2010, Dresden, Germany, March 8–12,2010 (Dep. Electr. Comput. Eng., Rice Univ., 2010), p. 1. – reference: JEDEC Standard JEP001-2A (2018). – reference: E. Wu, J. Suñé, C. LaRow, and R. Dufresne, in Proceedings of the IEEE International Electron Devices Meeting (2012), p. 28.5.1. – reference: ChenC. Y.ChangC. Y.ChienC. H.Appl. Phys. Lett.19997437081999ApPhL..74.3708C10.1063/1.123228 – reference: BorjaJ. P.PlawskyJ. L.LuT.Dielectric Breakdown in Gigascale Electronics: Time Dependent Failure Mechanisms, Springer Briefs in Materials2016SwitzerlandSpringer Int10.1007/978-3-319-43220-5 – reference: McPhersonJ.KimJ.ShanwareA.MogulH. C.Appl. Phys. Lett.20038221212003ApPhL..82.2121M10.1063/1.1565180 – reference: JEDEC Standard JEP122H (2016). – reference: A. V. Strogonov, Tekhnol. Elektron. Prom-sti., No. 3, 90 (2007). – volume-title: JPL Publ. No. 08-5 2/08 year: 2008 ident: 3131_CR2 – ident: 3131_CR8 – volume: 43 start-page: 70 year: 1996 ident: 3131_CR13 publication-title: IEEE Trans. Electron Dev. doi: 10.1109/16.477595 – ident: 3131_CR17 – volume: 74 start-page: 3708 year: 1999 ident: 3131_CR10 publication-title: Appl. Phys. Lett. doi: 10.1063/1.123228 – ident: 3131_CR16 – volume: 46 start-page: 1787 year: 2002 ident: 3131_CR6 publication-title: Solid-State Electron. doi: 10.1016/S0038-1101(02)00151-X – ident: 3131_CR15 – ident: 3131_CR1 – ident: 3131_CR12 doi: 10.1109/IEDM.2012.6479123 – ident: 3131_CR7 – volume: 82 start-page: 2121 year: 2003 ident: 3131_CR4 publication-title: Appl. Phys. Lett. doi: 10.1063/1.1565180 – ident: 3131_CR14 – ident: #cr-split#-3131_CR9.2 – ident: #cr-split#-3131_CR9.1 – volume-title: Dielectric Breakdown in Gigascale Electronics: Time Dependent Failure Mechanisms, Springer Briefs in Materials year: 2016 ident: 3131_CR5 doi: 10.1007/978-3-319-43220-5 – volume: 46 start-page: 1787 year: 2002 ident: 3131_CR11 publication-title: Solid-State Electron. doi: 10.1016/S0038-1101(02)00151-X – volume-title: Time Dependent Breakdown of Gate Oxide and Prediction of Oxide Gate Lifetime year: 2012 ident: 3131_CR3
SSID	ssj0011854
Score	2.2522988
Snippet	The current mathematical models of gate dielectric degradation are used to determine the value of a device’s operating time to failure depending on its...
SourceID	proquest crossref springer
SourceType	Aggregation Database Index Database Publisher
StartPage	1045
SubjectTerms	Degradation Dielectrics Electric fields Elements of Integrated Electronics Magnetic Materials Magnetism Mathematical models MOS devices Physics Physics and Astronomy Semiconductor devices Silicon dioxide Thickness Transistors
Title	Analysis of Degradation Mechanisms of Gate Dielectrics Based on SiO2 in MOS Transistors
URI	https://link.springer.com/article/10.1134/S1063782621130054 https://www.proquest.com/docview/2642373933
Volume	55
WOSCitedRecordID	wos000744036300005&url=https%3A%2F%2Fcvtisr.summon.serialssolutions.com%2F%23%21%2Fsearch%3Fho%3Df%26include.ft.matches%3Dt%26l%3Dnull%26q%3D
hasFullText	1
inHoldings	1
isFullTextHit
isPrint
journalDatabaseRights	– providerCode: PRVAVX databaseName: SpringerLINK Contemporary 1997-Present customDbUrl: eissn: 1090-6479 dateEnd: 99991231 omitProxy: false ssIdentifier: ssj0011854 issn: 1063-7826 databaseCode: RSV dateStart: 19970101 isFulltext: true titleUrlDefault: https://link.springer.com/search?facet-content-type=%22Journal%22 providerName: Springer Nature
link	http://cvtisr.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV07T8MwED5BAQkGHgVEoSAPTKCIxHk5I1AqFlpEeHSLEj-kDE1RU_j9nJ2E8hxgyeKLFTm2v-985-8AjrnHI3SUUwtdDXxQW1qZJ_QBPJJTiQ4Zt6tiE-FgwEaj6La-x1022e5NSNLs1FXdEe8sRufFRTwL0GXRGuveIiwh2jG9Gu_ix_fQAQKQCSWjtaXN61Dmj118BqM5w_wSFDVY09_411duwnpNLcl5NRe2YEEWbVj7IDjYhhWT8MnLbXhq1EjIRJGeVoyoiiuRG6nvAufl2LTowzXSy6tiOfgiuUDUEwTt4nxISY72w5gYwDN6I-UOPPSv7i-vrbrIgsVpwGZWxDIkDbrWA5VCBLaKQo6wrpjDQ1zfMnQyJIGZSnmkMuSKVODW6mTSp0L5rvLcXWgVk0LuAWEiDRjTajK-Qq-bp1xrHCAFdESENCntwEkz2slzpaWRGB_E9ZJv49aBbvM_knpZlQmyN-pqDT-3A6fN-M-bf-1s_0_WB7BKdeaKSVrpQms2fZGHsMxfZ3k5PTKz7Q1OLsle
linkProvider	Springer Nature
linkToHtml	http://cvtisr.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV3JTsMwEB1BAQEHlgKiUMAHTqCIxEmzHIFSFdEFkQK9RYkXKQda1BS-n7GTUNYDXHLxxIoc2--NZ_wG4Jg5LEBHOTbQ1cAHNYWROFwdwCM5FeiQMTMvNuH1ev5wGNwW97izMtu9DEnqnTqvO-Kchei82IhnLrosSmPdmYcFBwFL5fHdhQ_voQMEIB1KRmtDmRehzB-7-AxGM4b5JSiqsaa1_q-v3IC1glqS83wubMKcGFVh9YPgYBWWdMIny7bgsVQjIWNJmkoxIi-uRLpC3QVOsyfdog7XSDPNi-Xgi-QCUY8TtAvTPiUp2vdDogFP641k23Dfuhpcto2iyILBqOtPjcBPkDSoWg9UcO6aMvAYwrr0Lebh-haelSAJTGTMApkgV6Qct1YrEQ3KZcOWjr0DldF4JHaB-Dx2fV-pyTQket0sZkrjACmgxQOkSXENTsrRjp5zLY1I-yC2E30btxrUy_8RFcsqi5C9UVtp-Nk1OC3Hf9b8a2d7f7I-guX2oNuJOte9m31YoSqLRSew1KEynbyIA1hkr9M0mxzqmfcGyJLMQg
linkToPdf	http://cvtisr.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwpV3JTsMwEB1BWQQHlgKiUMAHTqCojZNmOQKlAgFtpbD0FiVepBxIqybw_YydhLIeEJdcPLEiL5k3nvF7AMfMZj4GypGBoQY-aFsYsc3VATyCU4EBGWsXYhNuv--NRv6w1DnNqmr3KiVZ3GlQLE1p3ppwWWqQ2K0AAxkLfZuD4YviW7fnYcFWmkEqXA8e39MI6Ix0WhmtDWVepjV_7OKzY5qhzS8JUu13euv__uINWCshJzkr1sgmzIm0DqsfiAjrsKQLQVm2BU8VSwkZS9JVTBKF6BK5E-qOcJI96xZ16Ea6SSGigy-Sc_SGnKBdkAwoSdB-EBDtCDUPSbYND73L-4sroxRfMBh1vNzwvRjBhNKAoIJzpy19l6G7l57JXNz3wjVjBIexjJgvY8SQlOMv14xFh3LZsaRt7UAtHadiF4jHI8fzFMtMR2I0ziKmuA8QGprcR_gUNeCkGvlwUnBshDo2sezw27g1oFnNTVhutyxEVEctxe1nNeC0motZ86-d7f3J-giWh91eeHvdv9mHFaqKW3RdSxNq-fRFHMAie82TbHqoF-EbkRHVJg
openUrl	ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Analysis+of+Degradation+Mechanisms+of+Gate+Dielectrics+Based+on+SiO2+in+MOS+Transistors&rft.jtitle=Semiconductors+%28Woodbury%2C+N.Y.%29&rft.au=Eliseeva%2C+D+A&rft.au=Safonov%2C+S+O&rft.date=2021-12-01&rft.pub=Springer+Nature+B.V&rft.issn=1063-7826&rft.eissn=1090-6479&rft.volume=55&rft.issue=13&rft.spage=1045&rft.epage=1048&rft_id=info:doi/10.1134%2FS1063782621130054&rft.externalDBID=NO_FULL_TEXT
thumbnail_l	http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=1063-7826&client=summon
thumbnail_m	http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=1063-7826&client=summon
thumbnail_s	http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=1063-7826&client=summon