Energy dependence of morphologies on photoresist surfaces under Ar+ ion bombardment with normal incidence
[Display omitted] •Energy dependence of resist morphology under ion bombardment is demonstrated.•Light molecules in organic resist were enriched by ion bombardment.•Ion energy shows great potential for modulating chemistry and morphology.•Nanoholes were formed on organic resist in a wide ion energy...
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| Vydané v: | Applied surface science Ročník 523; s. 146510 |
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| Hlavní autori: | , , , , , |
| Médium: | Journal Article |
| Jazyk: | English |
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Elsevier B.V
01.09.2020
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| ISSN: | 0169-4332, 1873-5584 |
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| Abstract | [Display omitted]
•Energy dependence of resist morphology under ion bombardment is demonstrated.•Light molecules in organic resist were enriched by ion bombardment.•Ion energy shows great potential for modulating chemistry and morphology.•Nanoholes were formed on organic resist in a wide ion energy range.•Morphology evolution is preliminarily explained using existing theoretical models.
The energy dependence of nanostructures on a photoresist produced by ion bombardment (IB) under normal incidence is studied through atomic force microscopy and time-of-flight secondary ion mass spectroscopy (ToF-SIMS). The energy-dependent morphology evolved from weak islands via nanoholes to a smooth surface on the resist; in particular, nanoholes were produced for a broad energy range of 300–550 eV. The enrichment of light components in the surface layer of the irradiated resist was illustrated owing to the strong decomposition of the photoresist by IB. The energy dependence of the morphologies is explained according to the ToF-SIMS characterization and the existing theoretical models of IB, which is an IB-induced synergy of chemical variation and sputtering. This study extends the IB in inorganic materials into an organic-multicomponent photoresist and provides new insights into the experimental evidence for nanoholes and possible parameters to improve the relevant theoretical model. |
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| AbstractList | [Display omitted]
•Energy dependence of resist morphology under ion bombardment is demonstrated.•Light molecules in organic resist were enriched by ion bombardment.•Ion energy shows great potential for modulating chemistry and morphology.•Nanoholes were formed on organic resist in a wide ion energy range.•Morphology evolution is preliminarily explained using existing theoretical models.
The energy dependence of nanostructures on a photoresist produced by ion bombardment (IB) under normal incidence is studied through atomic force microscopy and time-of-flight secondary ion mass spectroscopy (ToF-SIMS). The energy-dependent morphology evolved from weak islands via nanoholes to a smooth surface on the resist; in particular, nanoholes were produced for a broad energy range of 300–550 eV. The enrichment of light components in the surface layer of the irradiated resist was illustrated owing to the strong decomposition of the photoresist by IB. The energy dependence of the morphologies is explained according to the ToF-SIMS characterization and the existing theoretical models of IB, which is an IB-induced synergy of chemical variation and sputtering. This study extends the IB in inorganic materials into an organic-multicomponent photoresist and provides new insights into the experimental evidence for nanoholes and possible parameters to improve the relevant theoretical model. |
| ArticleNumber | 146510 |
| Author | Hirsch, Dietmar Liu, Ying Hong, Yilin Frost, Frank Yang, Gaoyuan Li, Jinyu |
| Author_xml | – sequence: 1 givenname: Gaoyuan surname: Yang fullname: Yang, Gaoyuan organization: National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hezuohua South Road 42, 230029 Hefei, Anhui, PR China – sequence: 2 givenname: Dietmar surname: Hirsch fullname: Hirsch, Dietmar organization: Leibniz Institute of Surface Engineering, Permoserstraße 15, 04318 Leipzig, Germany – sequence: 3 givenname: Jinyu surname: Li fullname: Li, Jinyu organization: National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hezuohua South Road 42, 230029 Hefei, Anhui, PR China – sequence: 4 givenname: Ying surname: Liu fullname: Liu, Ying email: liuychch@ustc.edu.cn organization: National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hezuohua South Road 42, 230029 Hefei, Anhui, PR China – sequence: 5 givenname: Frank surname: Frost fullname: Frost, Frank organization: Leibniz Institute of Surface Engineering, Permoserstraße 15, 04318 Leipzig, Germany – sequence: 6 givenname: Yilin surname: Hong fullname: Hong, Yilin organization: National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hezuohua South Road 42, 230029 Hefei, Anhui, PR China |
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| Keywords | Nanostructures ToF-SIMS Ion energy Photoresist surface Ion bombardment Nanoholes |
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| Title | Energy dependence of morphologies on photoresist surfaces under Ar+ ion bombardment with normal incidence |
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