Deposition mechanism and photodetector application of plasma-enhanced atomic layer-deposited Ta2O5 films at various deposition temperatures
In this work, a plasma-enhanced atomic layer deposition (PEALD) has been employed to fabricate Ta2O5 thin films for application in ultraviolet detection. The film properties have been explored in a wide deposition temperature range of 200–450 °C. A deposition mechanism with three deposited states of...
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| Vydané v: | Ceramics international Ročník 51; číslo 19; s. 28791 - 28801 |
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| Hlavní autori: | , , , , , , , |
| Médium: | Journal Article |
| Jazyk: | English |
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Elsevier Ltd
01.08.2025
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| ISSN: | 0272-8842 |
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| Abstract | In this work, a plasma-enhanced atomic layer deposition (PEALD) has been employed to fabricate Ta2O5 thin films for application in ultraviolet detection. The film properties have been explored in a wide deposition temperature range of 200–450 °C. A deposition mechanism with three deposited states of physisorption, chemisorption and desorption has been proposed to illustrate the temperature-controlled properties of Ta2O5 films. The ALD temperature window has been decided to be 250−350 °C with a close growth per cycle of ∼0.61 Å/cycle and the chemisorption is dominant in this temperature range. Based on those Ta2O5 films deposited in ALD window, Ta2O5/p-Si heterojunction ultraviolet photodetectors have been fabricated, which can achieve a superior performance with a high photo/dark current ratio of 7.2 × 104, a high responsivity of 0.61 A/W and a good specific detectivity of 1.9 × 1012 Jones at −5 V and 254 nm ultraviolet light. In addition, photodetectors with Ta2O5 films deposited at 350 °C shows an improved spectral response in the wavelength range from 200 nm to 360 nm with a peak response of 0.82 A/W at 296 nm. |
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| AbstractList | In this work, a plasma-enhanced atomic layer deposition (PEALD) has been employed to fabricate Ta2O5 thin films for application in ultraviolet detection. The film properties have been explored in a wide deposition temperature range of 200–450 °C. A deposition mechanism with three deposited states of physisorption, chemisorption and desorption has been proposed to illustrate the temperature-controlled properties of Ta2O5 films. The ALD temperature window has been decided to be 250−350 °C with a close growth per cycle of ∼0.61 Å/cycle and the chemisorption is dominant in this temperature range. Based on those Ta2O5 films deposited in ALD window, Ta2O5/p-Si heterojunction ultraviolet photodetectors have been fabricated, which can achieve a superior performance with a high photo/dark current ratio of 7.2 × 104, a high responsivity of 0.61 A/W and a good specific detectivity of 1.9 × 1012 Jones at −5 V and 254 nm ultraviolet light. In addition, photodetectors with Ta2O5 films deposited at 350 °C shows an improved spectral response in the wavelength range from 200 nm to 360 nm with a peak response of 0.82 A/W at 296 nm. |
| Author | Wu, Wan-Yu Huang, Chien-Jung Cho, Yun-Shao Lien, Shui-Yang Wang, Chen Wang, Jian-Gui Wuu, Dong-Sing Zhou, Chen-Hao |
| Author_xml | – sequence: 1 givenname: Chen surname: Wang fullname: Wang, Chen organization: Xiamen Key Laboratory of Development and Application for Advanced Semiconductor Coating Technology, School of Opto-Electronic and Communication Engineering, Xiamen University of Technology, Xiamen, 361024, China – sequence: 2 givenname: Chen-Hao surname: Zhou fullname: Zhou, Chen-Hao organization: Xiamen Key Laboratory of Development and Application for Advanced Semiconductor Coating Technology, School of Opto-Electronic and Communication Engineering, Xiamen University of Technology, Xiamen, 361024, China – sequence: 3 givenname: Jian-Gui surname: Wang fullname: Wang, Jian-Gui organization: Xiamen Key Laboratory of Development and Application for Advanced Semiconductor Coating Technology, School of Opto-Electronic and Communication Engineering, Xiamen University of Technology, Xiamen, 361024, China – sequence: 4 givenname: Yun-Shao surname: Cho fullname: Cho, Yun-Shao organization: Department of Electrical Engineering, Da-Yeh University, Changhua, 51591, Taiwan – sequence: 5 givenname: Wan-Yu surname: Wu fullname: Wu, Wan-Yu organization: Department of Materials Science and Engineering, National United University, Miaoli, 36063, Taiwan – sequence: 6 givenname: Dong-Sing orcidid: 0000-0002-0314-8743 surname: Wuu fullname: Wuu, Dong-Sing organization: Department of Applied Materials and Optoelectronic Engineering, National Chi Nan University, Nantou, 54561, Taiwan – sequence: 7 givenname: Chien-Jung surname: Huang fullname: Huang, Chien-Jung email: chien@nuk.edu.tw organization: Department of Applied Physics, National University of Kaohsiung, Kaohsiung, 81148, Taiwan – sequence: 8 givenname: Shui-Yang orcidid: 0000-0002-3289-9538 surname: Lien fullname: Lien, Shui-Yang email: sylien@xmut.edu.cn organization: Xiamen Key Laboratory of Development and Application for Advanced Semiconductor Coating Technology, School of Opto-Electronic and Communication Engineering, Xiamen University of Technology, Xiamen, 361024, China |
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| Title | Deposition mechanism and photodetector application of plasma-enhanced atomic layer-deposited Ta2O5 films at various deposition temperatures |
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