A High-Performance and High-Robustness Triple-Node-Upset Tolerant Latch Based on Redundant-Node Hardening

In response to the issues of high cost, large overhead, and limited node fault tolerance in current latch hardening techniques, this article proposes a latch circuit resistant to triple-node-upset (TNU) based on redundant-node hardening technology. This latch comprises eight 1P2N modules interlocked...

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Veröffentlicht in:IEEE transactions on very large scale integration (VLSI) systems Jg. 33; H. 5; S. 1373 - 1383
Hauptverfasser: Zhao, Qiang, Liu, Qingyi, Zhang, Xinyi, Hao, Licai, Li, Xin, Zhang, Shengyue, Peng, Chunyu, Lin, Zhiting, Wu, Xiulong
Format: Journal Article
Sprache:Englisch
Veröffentlicht: New York IEEE 01.05.2025
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
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ISSN:1063-8210, 1557-9999
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Abstract In response to the issues of high cost, large overhead, and limited node fault tolerance in current latch hardening techniques, this article proposes a latch circuit resistant to triple-node-upset (TNU) based on redundant-node hardening technology. This latch comprises eight 1P2N modules interlocked, with its output isolated by two levels of C-elements (CEs), achieving tolerance to TNU. The performance of the redundant-node reinforcement TNU tolerant latch (RNRTTL) was simulated and verified using CMOS 65 nm technology. The simulation results indicate that the RNRTTL circuit has a D-Q delay of 14.14 ps, static power consumption of <inline-formula> <tex-math notation="LaTeX">4.03~\mu </tex-math></inline-formula>w, an area of <inline-formula> <tex-math notation="LaTeX">32.87~\mu </tex-math></inline-formula>m2, and an area-static power-D-Q delay-product (APDP) of 1873, respectively. Compared to the triple-node upset tolerant latches TTLL, TNU-latch, TNURL, and HLTNURL reported in the current literature, the proposed latch demonstrates an average reduction of 219.9%, 164.9%, 150.7%, and 2464.8% in D-Q delay, static power consumption, area, and APDP, respectively, indicating that the RNRTTL latch has superior comprehensive performance; furthermore, a series of 2000 Monte Carlo (MC) simulations on the node group <inline-formula> <tex-math notation="LaTeX">\langle </tex-math></inline-formula>Q, X0, X<inline-formula> <tex-math notation="LaTeX">8\rangle </tex-math></inline-formula> reveal that the proposed latch circuit possesses good stability, making it suitable for harsh radiation environments.
AbstractList In response to the issues of high cost, large overhead, and limited node fault tolerance in current latch hardening techniques, this article proposes a latch circuit resistant to triple-node-upset (TNU) based on redundant-node hardening technology. This latch comprises eight 1P2N modules interlocked, with its output isolated by two levels of C-elements (CEs), achieving tolerance to TNU. The performance of the redundant-node reinforcement TNU tolerant latch (RNRTTL) was simulated and verified using CMOS 65 nm technology. The simulation results indicate that the RNRTTL circuit has a D-Q delay of 14.14 ps, static power consumption of [Formula Omitted]w, an area of [Formula Omitted]m2, and an area-static power-D–Q delay-product (APDP) of 1873, respectively. Compared to the triple-node upset tolerant latches TTLL, TNU-latch, TNURL, and HLTNURL reported in the current literature, the proposed latch demonstrates an average reduction of 219.9%, 164.9%, 150.7%, and 2464.8% in D-Q delay, static power consumption, area, and APDP, respectively, indicating that the RNRTTL latch has superior comprehensive performance; furthermore, a series of 2000 Monte Carlo (MC) simulations on the node group [Formula Omitted]Q, X0, X[Formula Omitted] reveal that the proposed latch circuit possesses good stability, making it suitable for harsh radiation environments.
In response to the issues of high cost, large overhead, and limited node fault tolerance in current latch hardening techniques, this article proposes a latch circuit resistant to triple-node-upset (TNU) based on redundant-node hardening technology. This latch comprises eight 1P2N modules interlocked, with its output isolated by two levels of C-elements (CEs), achieving tolerance to TNU. The performance of the redundant-node reinforcement TNU tolerant latch (RNRTTL) was simulated and verified using CMOS 65 nm technology. The simulation results indicate that the RNRTTL circuit has a D-Q delay of 14.14 ps, static power consumption of <inline-formula> <tex-math notation="LaTeX">4.03~\mu </tex-math></inline-formula>w, an area of <inline-formula> <tex-math notation="LaTeX">32.87~\mu </tex-math></inline-formula>m2, and an area-static power-D-Q delay-product (APDP) of 1873, respectively. Compared to the triple-node upset tolerant latches TTLL, TNU-latch, TNURL, and HLTNURL reported in the current literature, the proposed latch demonstrates an average reduction of 219.9%, 164.9%, 150.7%, and 2464.8% in D-Q delay, static power consumption, area, and APDP, respectively, indicating that the RNRTTL latch has superior comprehensive performance; furthermore, a series of 2000 Monte Carlo (MC) simulations on the node group <inline-formula> <tex-math notation="LaTeX">\langle </tex-math></inline-formula>Q, X0, X<inline-formula> <tex-math notation="LaTeX">8\rangle </tex-math></inline-formula> reveal that the proposed latch circuit possesses good stability, making it suitable for harsh radiation environments.
Author Hao, Licai
Zhao, Qiang
Zhang, Xinyi
Liu, Qingyi
Wu, Xiulong
Peng, Chunyu
Zhang, Shengyue
Lin, Zhiting
Li, Xin
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Snippet In response to the issues of high cost, large overhead, and limited node fault tolerance in current latch hardening techniques, this article proposes a latch...
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SubjectTerms C-element (CE)
Delay
Delays
Fault tolerance
Hardening
high performance
high robustness
Inverters
Latches
Logic
Logic gates
low cost
Nodes
Power consumption
Power demand
Redundancy
Resists
Simulation
Tolerance analysis
Transistors
triple-node-upset (TNU)
Very large scale integration
Title A High-Performance and High-Robustness Triple-Node-Upset Tolerant Latch Based on Redundant-Node Hardening
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