Closed-Form Capacitance Network Compact Model and Monte Carlo Analysis of the GIDL-Assisted Potential Growth in 3-D NAND Flash String

This study proposes new physics-based terminal capacitance models derived from the select gate (SG) channel potential in the gate-induced drain leakage (GIDL)-assisted 3-D NAND Flash string. These models accurately predict the transient behavior of the string across various SG voltage (VSG) ramps, s...

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Bibliographic Details
Published in:IEEE transactions on computer-aided design of integrated circuits and systems Vol. 44; no. 11; pp. 4438 - 4442
Main Authors: Kim, Sungju, Shin, Hyungcheol
Format: Journal Article
Language:English
Published: New York IEEE 01.11.2025
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects:
3-D NAND flash memory
band-to-band tunneling (BTBT)
CAD
Capacitance
capacitance model
Closed form solutions
Computer aided design
Electric potential
Exact solutions
Flash memories
Flash memory (computers)
Integrated circuit modeling
Integrated circuits
Logic gates
Monte-Carlo (MC) simulation
Radio frequency
select gate (SG) voltage
simulation program with integrated circuit emphasis (SPICE) simulation
SPICE
Strings
Three-dimensional displays
Transistors
Voltage
ISSN:0278-0070, 1937-4151
Online Access:Get full text
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Summary:This study proposes new physics-based terminal capacitance models derived from the select gate (SG) channel potential in the gate-induced drain leakage (GIDL)-assisted 3-D NAND Flash string. These models accurately predict the transient behavior of the string across various SG voltage (VSG) ramps, showing good agreement with computer-aided design (TCAD) simulation results. Their closed-form solutions eliminate iterative calculations, ensuring simulation program with integrated circuit emphasis (SPICE) compatibility and enabling monte-carlo (MC) simulations that account for various process variations and voltage ramp conditions. This approach provides critical insights into optimizing GIDL-assisted erase performance, advancing both the reliability and efficiency of next-generation 3-D NAND Flash memory.
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ISSN:0278-0070
1937-4151
DOI:10.1109/TCAD.2025.3565473