Single Event Transient Characterization of a Low-Dropout Regulator in a Sub-20 nm CMOS Technology

In this article, the mechanism of single event transient (SET) of a low-dropout (LDO) regulator fabricated in a sub-20 nm fin-field effect transistor (FinFET) technology was studied. Simulation program with integrated circuit emphasis (SPICE) circuit simulation finds that the most sensitive nodes ar...

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Published in:	IEEE transactions on nuclear science Vol. 72; no. 10; pp. 3351 - 3363
Main Authors:	Wang, Xun, Chen, Jianjun, Liang, Bin, Wen, Yi, Shen, Fan, Chi, Yaqing, Luo, Deng, Yu, Guofang
Format:	Journal Article
Language:	English
Published:	New York IEEE 01.10.2025 The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects:	Circuit simulation Confidence intervals Field effect transistors FinFETs Heavy ion experiment Heavy ions Hypothesis testing Integrated circuits Ions Logic gates low-dropout (LDO) regulator Power consumption Pulse amplitude Pulse duration Radiation hardening Regulation Regulators Reinforcement Semiconductor devices Simulation simulation program with integrated circuit emphasis (SPICE) circuit simulation single event transient (SET) SPICE Statistical analysis sub-20 nm fin-field effect transistor (FinFET) process Transistors Voltage control
ISSN:	0018-9499, 1558-1578
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Abstract	In this article, the mechanism of single event transient (SET) of a low-dropout (LDO) regulator fabricated in a sub-20 nm fin-field effect transistor (FinFET) technology was studied. Simulation program with integrated circuit emphasis (SPICE) circuit simulation finds that the most sensitive nodes are inside the error amplifier (EA) and bandgap reference (BGR). Moreover, the mechanism of generating SET was also studied. Furthermore, the SET characteristics of the LDO test chip were further studied through heavy ion experiments. The result of the SET width and amplitude statistical distribution found in the experiment is consistent with the SPICE circuit simulation result by histogram analysis, confidence interval, and hypothesis testing, which confirms the conclusion of the SPICE circuit simulation through a view of statistics. Based on the above analysis results, a radiation-hardened LDO was also proposed based on a comparator and pump transistor, focusing on the output of EA. In a positive SET pulse situation, the pulsewidth before and after the reinforcement is 55.83% shorter. The pulse amplitude is reduced by 91.37% through SPICE circuit simulation; in negative SET pulse situation, the pulsewidth before and after the reinforcement is 35.25% shorter, and the pulse amplitude is reduced by 78.30%; in BGR output situation, the pulsewidth before and after the reinforcement is 55.83% shorter, and the pulse amplitude is reduced by 91.37%; finally, through the analysis of power consumption and area calculation before and after hardening, the effectiveness of the hardening design was verified.
AbstractList	In this article, the mechanism of single event transient (SET) of a low-dropout (LDO) regulator fabricated in a sub-20 nm fin-field effect transistor (FinFET) technology was studied. Simulation program with integrated circuit emphasis (SPICE) circuit simulation finds that the most sensitive nodes are inside the error amplifier (EA) and bandgap reference (BGR). Moreover, the mechanism of generating SET was also studied. Furthermore, the SET characteristics of the LDO test chip were further studied through heavy ion experiments. The result of the SET width and amplitude statistical distribution found in the experiment is consistent with the SPICE circuit simulation result by histogram analysis, confidence interval, and hypothesis testing, which confirms the conclusion of the SPICE circuit simulation through a view of statistics. Based on the above analysis results, a radiation-hardened LDO was also proposed based on a comparator and pump transistor, focusing on the output of EA. In a positive SET pulse situation, the pulsewidth before and after the reinforcement is 55.83% shorter. The pulse amplitude is reduced by 91.37% through SPICE circuit simulation; in negative SET pulse situation, the pulsewidth before and after the reinforcement is 35.25% shorter, and the pulse amplitude is reduced by 78.30%; in BGR output situation, the pulsewidth before and after the reinforcement is 55.83% shorter, and the pulse amplitude is reduced by 91.37%; finally, through the analysis of power consumption and area calculation before and after hardening, the effectiveness of the hardening design was verified.
Author	Shen, Fan Luo, Deng Chen, Jianjun Chi, Yaqing Wang, Xun Liang, Bin Yu, Guofang Wen, Yi
Author_xml	– sequence: 1 givenname: Xun orcidid: 0009-0004-2199-5219 surname: Wang fullname: Wang, Xun email: lebenwangx@163.com organization: School of Computer Science and the Key Laboratory of Advanced Microprocessor Chips and Systems, National University of Defense Technology, Changsha, Hunan, China – sequence: 2 givenname: Jianjun orcidid: 0000-0003-0734-1660 surname: Chen fullname: Chen, Jianjun email: cjj192000@163.com organization: School of Computer Science and the Key Laboratory of Advanced Microprocessor Chips and Systems, National University of Defense Technology, Changsha, Hunan, China – sequence: 3 givenname: Bin surname: Liang fullname: Liang, Bin email: liangbin110@126.com organization: School of Computer Science and the Key Laboratory of Advanced Microprocessor Chips and Systems, National University of Defense Technology, Changsha, Hunan, China – sequence: 4 givenname: Yi orcidid: 0009-0006-1772-4883 surname: Wen fullname: Wen, Yi organization: School of Computer Science and the Key Laboratory of Advanced Microprocessor Chips and Systems, National University of Defense Technology, Changsha, Hunan, China – sequence: 5 givenname: Fan orcidid: 0009-0005-2620-5842 surname: Shen fullname: Shen, Fan organization: School of Computer Science and the Key Laboratory of Advanced Microprocessor Chips and Systems, National University of Defense Technology, Changsha, Hunan, China – sequence: 6 givenname: Yaqing orcidid: 0000-0001-9299-963X surname: Chi fullname: Chi, Yaqing organization: School of Computer Science and the Key Laboratory of Advanced Microprocessor Chips and Systems, National University of Defense Technology, Changsha, Hunan, China – sequence: 7 givenname: Deng surname: Luo fullname: Luo, Deng organization: School of Computer Science and the Key Laboratory of Advanced Microprocessor Chips and Systems, National University of Defense Technology, Changsha, Hunan, China – sequence: 8 givenname: Guofang surname: Yu fullname: Yu, Guofang organization: School of Computer Science and the Key Laboratory of Advanced Microprocessor Chips and Systems, National University of Defense Technology, Changsha, Hunan, China
BookMark	eNpFkN9LwzAQx4MouE3fffAh4HNnkiZN8yh1_oDpwNbnkLaXrWNLZtoq86-3YwOf7o77fO_gM0bnzjtA6IaSKaVE3Rfv-ZQRJqaxUCkR8gyNqBBpRIVMz9GIEJpGiit1icZtux5GLogYIZM3brkBPPsG1-EiGNc2hy5bmWCqDkLza7rGO-wtNnjuf6LH4He-7_AHLPuN6XzAjRtWeV9GjGC3xdnbIscFVCvnN365v0IX1mxauD7VCfp8mhXZSzRfPL9mD_OoYlx2kVXAuChJDZKoOKGy5MykVVxzCoIRCWWaEiu5SShNOK8tA1uqupJAqLQsiSfo7nh3F_xXD22n174PbnipY5ZwSfmgYqDIkaqCb9sAVu9CszVhrynRB5F6EKkPIvVJ5BC5PUYaAPjHKWWxYDT-A4Qwb4s
CODEN	IETNAE
Cites_doi	10.1109/tns.2013.2255313 10.1109/REDW51883.2020.9325859 10.1109/ted.2021.3113884 10.1587/elex.12.20150850 10.1109/tns.2005.860680 10.1109/IRPS.2012.6241810 10.1109/RADECS.2017.8696118 10.1109/tns.2006.886215 10.1109/taes.2024.3514604 10.1109/tns.2015.2449073 10.1109/led.2018.2877882 10.1109/tns.2016.2611639 10.1109/access.2025.3533965 10.1016/j.microrel.2023.115058 10.3390/sym14040788 10.1109/tns.1982.4336490 10.1109/tpel.2024.3349395 10.1016/j.microrel.2022.114490 10.1088/1674-4926/36/11/115006 10.1109/tns.2021.3070697 10.1109/RADECS.2015.7365687 10.1109/16.887014 10.1016/j.microrel.2017.04.030
ContentType	Journal Article
Copyright	Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2025
Copyright_xml	– notice: Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2025
DBID	97E RIA RIE AAYXX CITATION 7QF 7QL 7QQ 7SC 7SE 7SP 7SR 7T7 7TA 7TB 7U5 7U9 8BQ 8FD C1K F28 FR3 H8D H94 JG9 JQ2 KR7 L7M L~C L~D M7N P64
DOI	10.1109/TNS.2025.3598057
DatabaseName	IEEE All-Society Periodicals Package (ASPP) 2005-present IEEE All-Society Periodicals Package (ASPP) 1998-Present IEEE Electronic Library (IEL) CrossRef Aluminium Industry Abstracts Bacteriology Abstracts (Microbiology B) Ceramic Abstracts Computer and Information Systems Abstracts Corrosion Abstracts Electronics & Communications Abstracts Engineered Materials Abstracts Industrial and Applied Microbiology Abstracts (Microbiology A) Materials Business File Mechanical & Transportation Engineering Abstracts Solid State and Superconductivity Abstracts Virology and AIDS Abstracts METADEX Technology Research Database Environmental Sciences and Pollution Management ANTE: Abstracts in New Technology & Engineering Engineering Research Database Aerospace Database AIDS and Cancer Research Abstracts Materials Research Database ProQuest Computer Science Collection Civil Engineering Abstracts Advanced Technologies Database with Aerospace Computer and Information Systems Abstracts Academic Computer and Information Systems Abstracts Professional Algology Mycology and Protozoology Abstracts (Microbiology C) Biotechnology and BioEngineering Abstracts
DatabaseTitle	CrossRef Materials Research Database Technology Research Database Computer and Information Systems Abstracts – Academic Mechanical & Transportation Engineering Abstracts ProQuest Computer Science Collection Computer and Information Systems Abstracts Materials Business File Environmental Sciences and Pollution Management Aerospace Database Engineered Materials Abstracts Bacteriology Abstracts (Microbiology B) Algology Mycology and Protozoology Abstracts (Microbiology C) AIDS and Cancer Research Abstracts Industrial and Applied Microbiology Abstracts (Microbiology A) Advanced Technologies Database with Aerospace ANTE: Abstracts in New Technology & Engineering Civil Engineering Abstracts Aluminium Industry Abstracts Virology and AIDS Abstracts Electronics & Communications Abstracts Ceramic Abstracts METADEX Biotechnology and BioEngineering Abstracts Computer and Information Systems Abstracts Professional Solid State and Superconductivity Abstracts Engineering Research Database Corrosion Abstracts
DatabaseTitleList	Materials Research Database
Database_xml	– sequence: 1 dbid: RIE name: IEEE Electronic Library (IEL) url: https://ieeexplore.ieee.org/ sourceTypes: Publisher
DeliveryMethod	fulltext_linktorsrc
Discipline	Engineering
EISSN	1558-1578
EndPage	3363
ExternalDocumentID	10_1109_TNS_2025_3598057 11123521
Genre	orig-research
GrantInformation_xml	– fundername: National Natural Science Foundation of China grantid: 62174180; 62304258 funderid: 10.13039/501100001809
GroupedDBID	.DC .GJ 0R~ 29I 3O- 4.4 53G 5GY 5RE 5VS 6IK 8WZ 97E A6W AAJGR AASAJ AAWTH ABAZT ABQJQ ABVLG ACGFO ACGFS ACIWK ACNCT ACPRK AENEX AETEA AETIX AFRAH AGQYO AGSQL AHBIQ AI. AIBXA AKJIK AKQYR ALLEH ALMA_UNASSIGNED_HOLDINGS ASUFR ATWAV BEFXN BFFAM BGNUA BKEBE BPEOZ CS3 DU5 EBS EJD F5P HZ~ H~9 IAAWW IBMZZ ICLAB IDIHD IFIPE IFJZH IPLJI JAVBF LAI M43 MS~ O9- OCL P2P RIA RIE RNS TAE TN5 VH1 VOH AAYXX CITATION 7QF 7QL 7QQ 7SC 7SE 7SP 7SR 7T7 7TA 7TB 7U5 7U9 8BQ 8FD C1K F28 FR3 H8D H94 JG9 JQ2 KR7 L7M L~C L~D M7N P64
ID	FETCH-LOGICAL-c247t-f9e245b0de7093617b42a8c3d41e5207eb880f74a611644df2efb9dc7e017f263
IEDL.DBID	RIE
ISICitedReferencesCount	0
ISICitedReferencesURI	http://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=Summon&SrcAuth=ProQuest&DestLinkType=CitingArticles&DestApp=WOS_CPL&KeyUT=001603482100013&url=https%3A%2F%2Fcvtisr.summon.serialssolutions.com%2F%23%21%2Fsearch%3Fho%3Df%26include.ft.matches%3Dt%26l%3Dnull%26q%3D
ISSN	0018-9499
IngestDate	Sun Oct 26 21:50:36 EDT 2025 Sat Nov 29 07:01:36 EST 2025 Wed Oct 29 06:13:35 EDT 2025
IsPeerReviewed	true
IsScholarly	true
Issue	10
Language	English
License	https://ieeexplore.ieee.org/Xplorehelp/downloads/license-information/IEEE.html https://doi.org/10.15223/policy-029 https://doi.org/10.15223/policy-037
LinkModel	DirectLink
MergedId	FETCHMERGED-LOGICAL-c247t-f9e245b0de7093617b42a8c3d41e5207eb880f74a611644df2efb9dc7e017f263
Notes	ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 14
ORCID	0009-0006-1772-4883 0009-0005-2620-5842 0009-0004-2199-5219 0000-0001-9299-963X 0000-0003-0734-1660
PQID	3264714157
PQPubID	85457
PageCount	13
ParticipantIDs	ieee_primary_11123521 crossref_primary_10_1109_TNS_2025_3598057 proquest_journals_3264714157
PublicationCentury	2000
PublicationDate	2025-10-01
PublicationDateYYYYMMDD	2025-10-01
PublicationDate_xml	– month: 10 year: 2025 text: 2025-10-01 day: 01
PublicationDecade	2020
PublicationPlace	New York
PublicationPlace_xml	– name: New York
PublicationTitle	IEEE transactions on nuclear science
PublicationTitleAbbrev	TNS
PublicationYear	2025
Publisher	IEEE The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher_xml	– name: IEEE – name: The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
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SSID	ssj0014505
Score	2.4589415
Snippet	In this article, the mechanism of single event transient (SET) of a low-dropout (LDO) regulator fabricated in a sub-20 nm fin-field effect transistor (FinFET)...
SourceID	proquest crossref ieee
SourceType	Aggregation Database Index Database Publisher
StartPage	3351
SubjectTerms	Circuit simulation Confidence intervals Field effect transistors FinFETs Heavy ion experiment Heavy ions Hypothesis testing Integrated circuits Ions Logic gates low-dropout (LDO) regulator Power consumption Pulse amplitude Pulse duration Radiation hardening Regulation Regulators Reinforcement Semiconductor devices Simulation simulation program with integrated circuit emphasis (SPICE) circuit simulation single event transient (SET) SPICE Statistical analysis sub-20 nm fin-field effect transistor (FinFET) process Transistors Voltage control
Title	Single Event Transient Characterization of a Low-Dropout Regulator in a Sub-20 nm CMOS Technology
URI	https://ieeexplore.ieee.org/document/11123521 https://www.proquest.com/docview/3264714157
Volume	72
WOSCitedRecordID	wos001603482100013&url=https%3A%2F%2Fcvtisr.summon.serialssolutions.com%2F%23%21%2Fsearch%3Fho%3Df%26include.ft.matches%3Dt%26l%3Dnull%26q%3D
hasFullText	1
inHoldings	1
isFullTextHit
isPrint
journalDatabaseRights	– providerCode: PRVIEE databaseName: IEEE Electronic Library (IEL) customDbUrl: eissn: 1558-1578 dateEnd: 99991231 omitProxy: false ssIdentifier: ssj0014505 issn: 0018-9499 databaseCode: RIE dateStart: 19630101 isFulltext: true titleUrlDefault: https://ieeexplore.ieee.org/ providerName: IEEE
link	http://cvtisr.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwlV07T8MwELagYoCBZxGFgjywMKR1HCdORlRaMUBBtEjdoji-SJVogtoU_j5nJ31IiIEpkfJQcud7-R4fIbfMN_kaCBwIA-aIBFAPSg8cjMMi5eog1TyxYBNyOAwnk-i1bla3vTAAYIvPoGNObS5fF-nSbJV1US45OgwY7OxKKatmrXXKQPishitACUY_fpWTZFF3PBxhJMj9jhlXx4wl2rJBFlTllya25mVw9M8POyaHtR9J7yvGn5AdyE_JwdZ0wTOSjPDwAbRvShqpNUqm-ZH21jOaqxZMWmQ0oU_Ft_NgIBOWJX2rAOqLOZ3meAmVCy5zms9o7_llRDe78U3yPuiPe49OjajgpFzI0ski4MJXTINkkYfOixI8CVNPCxd8ziQoFOdMiiRwMYwSOuOQqUinElBwMx5456SRFzlcEBqA64Ua_5opT2jgyiTghK8VeMrlWdoidysax5_V4IzYBhwsipEfseFHXPOjRZqGppv7anK2SHvFlbgWrUWM_iYaVPQ75OUfj12RffP2quSuTRrlfAnXZC_9KqeL-Y1dNT8p474K
linkProvider	IEEE
linkToHtml	http://cvtisr.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwlV1LT4NAEN6YaqIefNZYrboHLx5ol2WBcjS1TY1tNbYmvRGWHZImCqal-vedXegjMR48QQIEmNl57Tw-Qm6Zq_M14FnQ8pglIkA96DtgYRwWSFt5seKRAZvwh8PWZBK8lM3qphcGAEzxGTT0qcnlqyxe6K2yJsolR4cBg51tVwhuF-1aq6SBcFkJWIAyjJ78MivJguZ4OMJYkLsNPbCOaVu0YYUMrMovXWwMTPfwn592RA5KT5LeF6w_JluQnpD9jfmCpyQa4eEdaEcXNVJjlnT7I22vpjQXTZg0S2hE-9m39aBBExY5fS0g6rMZnaZ4CdULLnSaftD24HlE1_vxVfLW7YzbPavEVLBiLvzcSgLgwpVMgc8CB90XKXjUih0lbHA580GiQCe-iDwbAymhEg6JDFTsA4puwj3njFTSLIVzQj2wnZbCv2bSEQq41Ck44SoJjrR5EtfI3ZLG4WcxOiM0IQcLQuRHqPkRlvyokaqm6fq-kpw1Ul9yJSyFax6ix4kmFT0P_-KPx27Ibm886If9x-HTJdnTbyoK8Oqkks8WcEV24q98Op9dmxX0AzpnwVE
openUrl	ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Single+Event+Transient+Characterization+of+a+Low-Dropout+Regulator+in+a+Sub-20+nm+CMOS+Technology&rft.jtitle=IEEE+transactions+on+nuclear+science&rft.au=Wang%2C+Xun&rft.au=Chen%2C+Jianjun&rft.au=Liang%2C+Bin&rft.au=Wen%2C+Yi&rft.date=2025-10-01&rft.issn=0018-9499&rft.eissn=1558-1578&rft.volume=72&rft.issue=10&rft.spage=3351&rft.epage=3363&rft_id=info:doi/10.1109%2FTNS.2025.3598057&rft.externalDBID=n%2Fa&rft.externalDocID=10_1109_TNS_2025_3598057
thumbnail_l	http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=0018-9499&client=summon
thumbnail_m	http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=0018-9499&client=summon
thumbnail_s	http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=0018-9499&client=summon