A Silicon-Based D-Band Miniaturized Diplexer Using Perturbed Dual-Mode Junction-Cavity

A D-band silicon-based diplexer is proposed using metallized rectangular waveguide cavities (MRWCs). Perturbed dual-mode junction-cavity is achieved as the connection network to form the lower and upper channels. The synthesized, simulated, and measured S-parameters of the diplexer show a good agree...

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Veröffentlicht in:IEEE transactions on microwave theory and techniques Jg. 73; H. 9; S. 5918 - 5928
Hauptverfasser: Zhang, Zi-Qi, Zhou, Liang, Zhang, Cheng-Rui, Zhou, Kang
Format: Journal Article
Sprache:Englisch
Veröffentlicht: New York IEEE 01.09.2025
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Schlagworte:
Bandwidth
Bandwidths
Channels
Communications systems
Couplings
D-band
Diplexers
Electric fields
Fabrication
Holes
Insertion loss
Loss measurement
low loss
metallized rectangular waveguide cavity (MRWC)
Metallizing
miniaturization
Passband
perturbed dual-mode junction-cavity
Radio frequency
Rectangular waveguides
Silicon
silicon-based diplexer
Topology
ISSN:0018-9480, 1557-9670
Online-Zugang:Volltext
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Zusammenfassung:A D-band silicon-based diplexer is proposed using metallized rectangular waveguide cavities (MRWCs). Perturbed dual-mode junction-cavity is achieved as the connection network to form the lower and upper channels. The synthesized, simulated, and measured S-parameters of the diplexer show a good agreement. The measured insertion loss is 1.77 dB with a bandwidth of 2.5% at 144.1 GHz and 1.38 dB with a bandwidth of 3% at 153.9 GHz. The return loss (RL) is better than 10 dB, and the adjacent channel rejection is better than 27 dB. The measured center frequency (CF) shifts by 0.05% and 0.5%, with bandwidth variations of 7% and 11%, compared to simulation in the lower and upper channels, respectively. The overall size of the diplexer is only <inline-formula> <tex-math notation="LaTeX">1.5\times 1.62 </tex-math></inline-formula> mm2. It demonstrates an excellent performance in terms of low loss and compact size compared to state-of-the-art works using our metallized through silicon ring trench manufacturing (MTSRTM) technology. The proposed silicon-based diplexer can be further integrated directly with transceivers in radar or communication systems at D-band.
Bibliographie:ObjectType-Article-1
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ISSN:0018-9480
1557-9670
DOI:10.1109/TMTT.2024.3468452