The deposition of thin films of cadmium zinc sulfide Cd1−x Zn x S at 250 °C from spin-coated xanthato complexes: a potential route to window layers for photovoltaic cells

Thin films of Cd1−xZnxS (CZS) were prepared by a novel spin coating/melt method from cadmium ethylxanthato [Cd(C2H5OCS2)2] and zinc ethylxanthato [Zn(C2H5OCS2)2] in x ratios of 0–0.15 and of 1. A solution of the precursor(s) in THF was spin coated onto a glass substrate and then heated at 250 °C for...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of materials science Jg. 53; H. 6; S. 4360 - 4370
Hauptverfasser: Bakly, Ali A. K., Spencer, Ben F., O’Brien, Paul
Format: Journal Article
Sprache:Englisch
Veröffentlicht: New York Springer Nature B.V 01.03.2018
Schlagworte:
Cadmium
coatings
Electrical resistivity
Emission analysis
energy-dispersive X-ray analysis
glass
Glass substrates
Inductively coupled plasma
Materials science
melting
nitrogen
Photovoltaic cells
Precursors
Raman spectroscopy
scanning electron microscopy
Solar cells
solar energy
Spectrum analysis
Spin coating
Thickness
Thin films
ultraviolet-visible spectroscopy
X ray photoelectron spectroscopy
Zinc
Zinc sulfide
ISSN:0022-2461, 1573-4803
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Thin films of Cd1−xZnxS (CZS) were prepared by a novel spin coating/melt method from cadmium ethylxanthato [Cd(C2H5OCS2)2] and zinc ethylxanthato [Zn(C2H5OCS2)2] in x ratios of 0–0.15 and of 1. A solution of the precursor(s) in THF was spin coated onto a glass substrate and then heated at 250 °C for 1 h under N2. The thickness of the film formed can be controlled by varying the solution composition and/or the spin rate of the coating. A total metal precursor solution concentration of 50 mM was used in all cases. The films were characterized by p-XRD, SEM, EDX, ICP-AES, XPS, UV–Vis absorption spectroscopy, Raman spectroscopy and resistivity measurements. The band gaps of the films were between 2.35–2.58 and 3.75 eV (0 ≤ x ≤ 0.15 and at x = 1). The resistivity of Cd1−xZnxS films was found to vary linearly with zinc contents, and the properties of the films suggest potential application to photovoltaics as window layers. This work is the first study to demonstrate Cd1−xZnxS thin films by a spin coating/melt method from xanthato precursors.
Bibliographie:ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 14
content type line 23
ISSN:0022-2461
1573-4803
DOI:10.1007/s10853-017-1872-1