Optimal Design of 100-2000 V 4H-SiC Power MOSFETs Using Multi-Objective Particle Swarm Optimization Algorithms

This work employed the particle swarm optimization (PSO) algorithm to assess the trade-off between breakdown voltage (BV) and on-state resistance (<inline-formula> <tex-math notation="LaTeX">\text{R}_{\textit {DS},\textit {on}}{)} </tex-math></inline-formula> in 4H-...

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Vydané v:	IEEE electron device letters Ročník 45; číslo 5; s. 786 - 788
Hlavní autori:	Luo, Runding, Sun, Botao, Hou, Xinlan, Shi, Wenhua, Zhang, Guoqi, Fan, Jiajie
Médium:	Journal Article
Jazyk:	English
Vydavateľské údaje:	New York IEEE 01.05.2024 The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Predmet:	Algorithms Design parameters Doping Electronic devices Field effect transistors JFET JFETs Metal oxide semiconductors Metal oxides MOSFET MOSFETs multi-objective optimization Multiple objective analysis Numerical models Optimization Particle swarm optimization Resistance Semiconductor devices SiC Silicon carbide Thickness Threshold voltage Transistors
ISSN:	0741-3106, 1558-0563
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