Optimal Design of 100-2000 V 4H-SiC Power MOSFETs Using Multi-Objective Particle Swarm Optimization Algorithms
This work employed the particle swarm optimization (PSO) algorithm to assess the trade-off between breakdown voltage (BV) and on-state resistance (<inline-formula> <tex-math notation="LaTeX">\text{R}_{\textit {DS},\textit {on}}{)} </tex-math></inline-formula> in 4H-...
Uložené v:
| Vydané v: | IEEE electron device letters Ročník 45; číslo 5; s. 786 - 788 |
|---|---|
| Hlavní autori: | , , , , , |
| Médium: | Journal Article |
| Jazyk: | English |
| Vydavateľské údaje: |
New York
IEEE
01.05.2024
The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Predmet: | |
| ISSN: | 0741-3106, 1558-0563 |
| On-line prístup: | Získať plný text |
| Tagy: |
Pridať tag
Žiadne tagy, Buďte prvý, kto otaguje tento záznam!
|
| Abstract | This work employed the particle swarm optimization (PSO) algorithm to assess the trade-off between breakdown voltage (BV) and on-state resistance (<inline-formula> <tex-math notation="LaTeX">\text{R}_{\textit {DS},\textit {on}}{)} </tex-math></inline-formula> in 4H-SiC metal oxide semiconductor field effect transistors (MOSFET) for power devices. In this work, the numerical model obtained after analyzing the resistance composition is utilized as the objective function in PSO to determine characteristic parameters in double-diffused metal oxide semiconductor field effect transistors (DMOSFET). These equations are input for the PSO algorithm. The derived characteristic parameters include the drift region doping concentration and thickness, cell size, channel length, JFET region length, JFET region thickness, and doping concentration. To adhere to common application constraints, this work optimizes these characteristic parameters to minimize the <inline-formula> <tex-math notation="LaTeX">\text{R}_{\textit {DS},\textit {on}} </tex-math></inline-formula> under typical BV ranging from 100 to 2000 V. The <inline-formula> <tex-math notation="LaTeX">\text{R}_{\textit {DS},\textit {on}} </tex-math></inline-formula> for some typical applications was extracted and validated through TCAD simulations to ensure algorithm accuracy. The reported results confirm that PSO yields superior outcomes and may be considered when designing devices. This work offers helpful insights into the design of characteristic parameters for 4H-SiC power DMOSFET devices and evaluates the feasibility of using PSO to optimize the characteristic parameters of power devices. |
|---|---|
| AbstractList | This work employed the particle swarm optimization (PSO) algorithm to assess the trade-off between breakdown voltage (BV) and on-state resistance ([Formula Omitted] in 4H–SiC metal oxide semiconductor field effect transistors (MOSFET) for power devices. In this work, the numerical model obtained after analyzing the resistance composition is utilized as the objective function in PSO to determine characteristic parameters in double-diffused metal oxide semiconductor field effect transistors (DMOSFET). These equations are input for the PSO algorithm. The derived characteristic parameters include the drift region doping concentration and thickness, cell size, channel length, JFET region length, JFET region thickness, and doping concentration. To adhere to common application constraints, this work optimizes these characteristic parameters to minimize the [Formula Omitted] under typical BV ranging from 100 to 2000 V. The [Formula Omitted] for some typical applications was extracted and validated through TCAD simulations to ensure algorithm accuracy. The reported results confirm that PSO yields superior outcomes and may be considered when designing devices. This work offers helpful insights into the design of characteristic parameters for 4H–SiC power DMOSFET devices and evaluates the feasibility of using PSO to optimize the characteristic parameters of power devices. This work employed the particle swarm optimization (PSO) algorithm to assess the trade-off between breakdown voltage (BV) and on-state resistance (<inline-formula> <tex-math notation="LaTeX">\text{R}_{\textit {DS},\textit {on}}{)} </tex-math></inline-formula> in 4H-SiC metal oxide semiconductor field effect transistors (MOSFET) for power devices. In this work, the numerical model obtained after analyzing the resistance composition is utilized as the objective function in PSO to determine characteristic parameters in double-diffused metal oxide semiconductor field effect transistors (DMOSFET). These equations are input for the PSO algorithm. The derived characteristic parameters include the drift region doping concentration and thickness, cell size, channel length, JFET region length, JFET region thickness, and doping concentration. To adhere to common application constraints, this work optimizes these characteristic parameters to minimize the <inline-formula> <tex-math notation="LaTeX">\text{R}_{\textit {DS},\textit {on}} </tex-math></inline-formula> under typical BV ranging from 100 to 2000 V. The <inline-formula> <tex-math notation="LaTeX">\text{R}_{\textit {DS},\textit {on}} </tex-math></inline-formula> for some typical applications was extracted and validated through TCAD simulations to ensure algorithm accuracy. The reported results confirm that PSO yields superior outcomes and may be considered when designing devices. This work offers helpful insights into the design of characteristic parameters for 4H-SiC power DMOSFET devices and evaluates the feasibility of using PSO to optimize the characteristic parameters of power devices. |
| Author | Fan, Jiajie Luo, Runding Shi, Wenhua Sun, Botao Zhang, Guoqi Hou, Xinlan |
| Author_xml | – sequence: 1 givenname: Runding orcidid: 0009-0003-0101-9387 surname: Luo fullname: Luo, Runding organization: Institute of Future Lighting, Academy for Engineering and Technology, Shanghai Engineering Technology Research Center of SiC Power Device, Fudan University, Shanghai, China – sequence: 2 givenname: Botao orcidid: 0000-0002-5772-8778 surname: Sun fullname: Sun, Botao organization: Research Institute of Fudan University in Ningbo, Ningbo, China – sequence: 3 givenname: Xinlan surname: Hou fullname: Hou, Xinlan organization: Institute of Future Lighting, Academy for Engineering and Technology, Shanghai Engineering Technology Research Center of SiC Power Device, Fudan University, Shanghai, China – sequence: 4 givenname: Wenhua surname: Shi fullname: Shi, Wenhua organization: Institute of Future Lighting, Academy for Engineering and Technology, Shanghai Engineering Technology Research Center of SiC Power Device, Fudan University, Shanghai, China – sequence: 5 givenname: Guoqi orcidid: 0000-0002-8023-5170 surname: Zhang fullname: Zhang, Guoqi organization: Department of Microelectronics Engineering, Delft University of Technology, Delft, The Netherlands – sequence: 6 givenname: Jiajie orcidid: 0000-0001-5400-737X surname: Fan fullname: Fan, Jiajie email: jiajie_fan@fudan.edu.cn organization: Institute of Future Lighting, Academy for Engineering and Technology, Shanghai Engineering Technology Research Center of SiC Power Device, Fudan University, Shanghai, China |
| BookMark | eNp9kM1PwjAYhxuDiYjePXho4nn4dm237kgAxQQCCeJ1Wcc7LBkbtkWif73j42A8eOrl9zxv81yTVlVXSMgdgy5jkDyOh4NuCKHocq5CAHFB2kxKFYCMeIu0IRYs4AyiK3Lt3BqACRGLNqmmW282WUkH6MyqonVBGUDQGIC-UTEK5qZPZ_UeLZ1M50_DV0cXzlQrOtmV3gRTvcbcm0-ks8x6k5dI5_vMbuhRa74zb-qK9spVbY1_37gbcllkpcPb89shi8bZHwXj6fNLvzcO8hBiHyidJTxElEvAQmrUSkdZnIR5nijJlxwjsRTIQYdSikIgJEvNkgi0CKXQquAd8nDybm39sUPn03W9s1VzMuUgogRUHKtmFZ1Wua2ds1ikufHHL3ubmTJlkB7apk3b9NA2PbdtQPgDbm1T0X79h9yfEIOIv-YiTqQC_gPN0IQx |
| CODEN | EDLEDZ |
| CitedBy_id | crossref_primary_10_1007_s10854_025_14807_x crossref_primary_10_1007_s00339_024_07857_1 crossref_primary_10_3390_smartcities8040132 |
| Cites_doi | 10.1109/sispad.2016.7605178 10.1016/j.mee.2017.11.021 10.23919/sispad.2017.8085260 10.1109/tvt.2006.877483 10.1109/ispsd.2014.6855980 10.1109/tie.2017.2716873 10.1109/isie.1998.707767 10.1007/978-3-540-88908-3_15 10.1109/led.2017.2785771 10.1109/apec.2015.7104691 10.1007/978-0-387-47314-7 10.1109/ecce50734.2022.9947823 10.1109/tpel.2014.2357836 10.1109/ecce.2019.8911893 |
| ContentType | Journal Article |
| Copyright | Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2024 |
| Copyright_xml | – notice: Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2024 |
| DBID | 97E RIA RIE AAYXX CITATION 7SP 8FD L7M |
| DOI | 10.1109/LED.2024.3382004 |
| DatabaseName | IEEE Xplore (IEEE) IEEE All-Society Periodicals Package (ASPP) 1998–Present IEEE Electronic Library (IEL) CrossRef Electronics & Communications Abstracts Technology Research Database Advanced Technologies Database with Aerospace |
| DatabaseTitle | CrossRef Technology Research Database Advanced Technologies Database with Aerospace Electronics & Communications Abstracts |
| DatabaseTitleList | Technology Research Database |
| Database_xml | – sequence: 1 dbid: RIE name: IEEE Electronic Library (IEL) url: https://ieeexplore.ieee.org/ sourceTypes: Publisher |
| DeliveryMethod | fulltext_linktorsrc |
| Discipline | Engineering |
| EISSN | 1558-0563 |
| EndPage | 788 |
| ExternalDocumentID | 10_1109_LED_2024_3382004 10479580 |
| Genre | orig-research |
| GrantInformation_xml | – fundername: Shanghai Pujiang Program grantid: 2021PJD002 – fundername: Shanghai Science and Technology Development Funds grantid: 19DZ2253400 funderid: 10.13039/100012543 – fundername: National Natural Science Foundation of China grantid: 52275559 funderid: 10.13039/501100001809 |
| GroupedDBID | -~X .DC 0R~ 29I 4.4 5GY 5VS 6IK 97E AAJGR AARMG AASAJ AAWTH ABAZT ABQJQ ABVLG ACGFO ACIWK ACNCT AENEX AETIX AFFNX AGQYO AGSQL AHBIQ AI. AIBXA AKJIK AKQYR ALLEH ALMA_UNASSIGNED_HOLDINGS ATWAV BEFXN BFFAM BGNUA BKEBE BPEOZ CS3 DU5 EBS EJD HZ~ IBMZZ ICLAB IFIPE IFJZH IPLJI JAVBF LAI M43 O9- OCL P2P RIA RIE RNS TAE TN5 TWZ VH1 AAYXX CITATION 7SP 8FD L7M |
| ID | FETCH-LOGICAL-c207t-8ba932ee5d0ef5beb8b6a792cc9853d3e64d4e30b2554f4e09db1960b4254b8f3 |
| IEDL.DBID | RIE |
| ISSN | 0741-3106 |
| IngestDate | Mon Jun 30 10:21:25 EDT 2025 Tue Nov 18 22:12:14 EST 2025 Sat Nov 29 03:57:35 EST 2025 Wed Aug 27 02:06:45 EDT 2025 |
| IsPeerReviewed | true |
| IsScholarly | true |
| Issue | 5 |
| Language | English |
| License | https://ieeexplore.ieee.org/Xplorehelp/downloads/license-information/IEEE.html https://doi.org/10.15223/policy-029 https://doi.org/10.15223/policy-037 |
| LinkModel | DirectLink |
| MergedId | FETCHMERGED-LOGICAL-c207t-8ba932ee5d0ef5beb8b6a792cc9853d3e64d4e30b2554f4e09db1960b4254b8f3 |
| Notes | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 14 |
| ORCID | 0000-0002-5772-8778 0000-0001-5400-737X 0009-0003-0101-9387 0000-0002-8023-5170 |
| PQID | 3046908778 |
| PQPubID | 85488 |
| PageCount | 3 |
| ParticipantIDs | crossref_citationtrail_10_1109_LED_2024_3382004 ieee_primary_10479580 proquest_journals_3046908778 crossref_primary_10_1109_LED_2024_3382004 |
| PublicationCentury | 2000 |
| PublicationDate | 2024-05-01 |
| PublicationDateYYYYMMDD | 2024-05-01 |
| PublicationDate_xml | – month: 05 year: 2024 text: 2024-05-01 day: 01 |
| PublicationDecade | 2020 |
| PublicationPlace | New York |
| PublicationPlace_xml | – name: New York |
| PublicationTitle | IEEE electron device letters |
| PublicationTitleAbbrev | LED |
| PublicationYear | 2024 |
| Publisher | IEEE The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher_xml | – name: IEEE – name: The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| References | ref12 ref14 ref11 ref10 ref2 ref1 Belton (ref13) 2008 ref8 ref7 ref9 ref4 ref3 ref6 ref5 |
| References_xml | – ident: ref12 doi: 10.1109/sispad.2016.7605178 – ident: ref1 doi: 10.1016/j.mee.2017.11.021 – ident: ref14 doi: 10.23919/sispad.2017.8085260 – ident: ref5 doi: 10.1109/tvt.2006.877483 – ident: ref9 doi: 10.1109/ispsd.2014.6855980 – ident: ref6 doi: 10.1109/tie.2017.2716873 – ident: ref4 doi: 10.1109/isie.1998.707767 – start-page: 405 volume-title: Multiobjective Optimization year: 2008 ident: ref13 doi: 10.1007/978-3-540-88908-3_15 – ident: ref3 doi: 10.1109/led.2017.2785771 – ident: ref11 doi: 10.1109/apec.2015.7104691 – ident: ref10 doi: 10.1007/978-0-387-47314-7 – ident: ref8 doi: 10.1109/ecce50734.2022.9947823 – ident: ref2 doi: 10.1109/tpel.2014.2357836 – ident: ref7 doi: 10.1109/ecce.2019.8911893 |
| SSID | ssj0014474 |
| Score | 2.4303794 |
| Snippet | This work employed the particle swarm optimization (PSO) algorithm to assess the trade-off between breakdown voltage (BV) and on-state resistance... This work employed the particle swarm optimization (PSO) algorithm to assess the trade-off between breakdown voltage (BV) and on-state resistance ([Formula... |
| SourceID | proquest crossref ieee |
| SourceType | Aggregation Database Enrichment Source Index Database Publisher |
| StartPage | 786 |
| SubjectTerms | Algorithms Design parameters Doping Electronic devices Field effect transistors JFET JFETs Metal oxide semiconductors Metal oxides MOSFET MOSFETs multi-objective optimization Multiple objective analysis Numerical models Optimization Particle swarm optimization Resistance Semiconductor devices SiC Silicon carbide Thickness Threshold voltage Transistors |
| Title | Optimal Design of 100-2000 V 4H-SiC Power MOSFETs Using Multi-Objective Particle Swarm Optimization Algorithms |
| URI | https://ieeexplore.ieee.org/document/10479580 https://www.proquest.com/docview/3046908778 |
| Volume | 45 |
| hasFullText | 1 |
| inHoldings | 1 |
| isFullTextHit | |
| isPrint | |
| journalDatabaseRights | – providerCode: PRVIEE databaseName: IEEE Electronic Library (IEL) customDbUrl: eissn: 1558-0563 dateEnd: 99991231 omitProxy: false ssIdentifier: ssj0014474 issn: 0741-3106 databaseCode: RIE dateStart: 19800101 isFulltext: true titleUrlDefault: https://ieeexplore.ieee.org/ providerName: IEEE |
| link | http://cvtisr.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwlV07T8MwELagYoCBZxGFgjywMKR1E7eOx6oPMZS2UgF1i2LnAkV9oKSFv8_ZSasiBBJDpAy2ZeU7390X34OQWwmhUjEPnZqrQ4drVznKRObomoy49sCVWXX9nuj3_fFYDvNkdZsLAwA2-Awq5tXe5UcLvTK_yqqmrICs-8jQd4VoZMlamysDzrOSy2giUbGwzZ0kk9Vep41M0OUV5GNGKr7ZINtU5Ycmtuale_TPjR2Tw9yPpM0M-BOyA_NTcrBVXfCMzAeoDmY4qG2jNOgipjXGjMAy-kz5vTOatOjQdEmjD4NRt_OYUhtAQG1SrjNQb5kypMNcvOjoM0xm1C6bp2_S5vRlkUyWr7O0SJ5wjda9k7dXcLTLxNLxVYjOG0A9YhDXFShfNUIhXa0l2vDIgwaPOHhMIevgMQcmI4XnlSk85lz5sXdOCvPFHC4IRTco5CA4dwXgI9AXVqoOyAWVQMLnl0h1_cEDndceNy0wpoHlIEwGCFFgIApyiErkbjPjPau78cfYooFka1yGRomU16AG-clMA8_-EPBxj5e_TLsi-2b1LKqxTArLZAXXZE9_LCdpcmOF7gtLNNFt |
| linkProvider | IEEE |
| linkToHtml | http://cvtisr.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwlV05T8MwFLZQQQIGbkShgAcWhrRu4jTxWPVQEb2kFtQtip0XKOqBesDf59lJqyIEEkOkDLZj5Xt-h99FyJ2AUMqYh1bRVqHFlS0tqSNzVFFEXDlgi6S6ftNrt_3BQHTTZHWTCwMAJvgM8vrV-PKjqVrqq7KCLisgXB8t9G2Xc5sl6VprpwHnSdFlFJLIWtjaK8lEoVmroi1o8zxaZJouvkkh01blBy82AqZ--M-tHZGDVJOk5QT6Y7IFkxOyv1Ff8JRMOsgQxjioauI06DSmRcY0yTL6THnD6g0rtKv7pNFWp1ev9efUhBBQk5ZrdeRbwg5pNyUw2vsMZ2Nqlk0TOGl59DKdDRev4_kZecI1Kg0rbbBgKZt5C8uXIapvAG7EIHYlSF-WQk_YSgmU4pEDJR5xcJhEu4PHHJiIJJ5YJvGgc-nHzjnJTKYTuCAUFaGQg4eoeICPh9qwlC6gNSg9NPn8LCmsfnig0urjugnGKDBWCBMBQhRoiIIUoiy5X894Typv_DH2TEOyMS5BI0tyK1CD9GzOA8dcCfi4x8tfpt2S3Ua_1QyaD-3HK7Knv5TEOOZIZjFbwjXZUR-L4Xx2YwjwC1041LQ |
| openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Optimal+Design+of+100%E2%80%932000+V+4H%E2%80%93SiC+Power+MOSFETs+Using+Multi-Objective+Particle+Swarm+Optimization+Algorithms&rft.jtitle=IEEE+electron+device+letters&rft.au=Luo%2C+Runding&rft.au=Sun%2C+Botao&rft.au=Hou%2C+Xinlan&rft.au=Shi%2C+Wenhua&rft.date=2024-05-01&rft.pub=The+Institute+of+Electrical+and+Electronics+Engineers%2C+Inc.+%28IEEE%29&rft.issn=0741-3106&rft.eissn=1558-0563&rft.volume=45&rft.issue=5&rft.spage=786&rft_id=info:doi/10.1109%2FLED.2024.3382004&rft.externalDBID=NO_FULL_TEXT |
| thumbnail_l | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=0741-3106&client=summon |
| thumbnail_m | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=0741-3106&client=summon |
| thumbnail_s | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=0741-3106&client=summon |