Fabrication of a solution-processed IGZO/NiO p-n diode

The fabrication of a p-n diode is investigated using a fully solution-processed method. Indium Gallium Zinc Oxide (IGZO) ink was synthesized and deposited on a quartz substrate and annealed to form a thin film serving as an n-type semiconductor. A facile sol-gel method was used to deposit a lithium...

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Bibliographic Details
Published in:Scientia Iranica. Transaction D, Computer science & engineering, electrical engineering Vol. 31; no. 21; pp. 1963 - 1970
Main Authors: Arjmandi, Nima, Seraj, Mohammad
Format: Journal Article
Language:English
Published: Tehran Sharif University of Technology 01.11.2024
Subjects:
Acids
Annealing
Carrier density
Chloride
Cost control
Diodes
Fabrication
Gallium
Hexagons
Indium
Indium gallium zinc oxide
Lithium
Mobility
Morphology
N-type semiconductors
Nickel
Nickel oxides
P-type semiconductors
Pore size
Scanning electron microscopy
Silver
Sol-gel processes
Solvents
Substrates
Thin films
X-ray diffraction
Zinc oxide
Zinc oxides
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Summary:The fabrication of a p-n diode is investigated using a fully solution-processed method. Indium Gallium Zinc Oxide (IGZO) ink was synthesized and deposited on a quartz substrate and annealed to form a thin film serving as an n-type semiconductor. A facile sol-gel method was used to deposit a lithium doped nickel oxide thin film (Li:NiO) as a p-type semiconductor. X-Ray Diffraction (XRD) and Scanning Electron Microscopy (SEM) were employed to characterize the structural properties of Li:NiO and IGZO films. XRD analysis revealed a polycrystalline bunsenite structure in the Li:NiO films. Nanocrystalline grains were also observed on the surface morphology of the Li:NiO films. The XRD analysis indicated that the IGZO films were amorphous. However, SEM images demonstrate a variety of nanostructures in these films, including hexagons. The Li:NiO molar ratio was optimized to minimize series resistance of the diode. NiO had a carrier density of 7.8E13 cm- and mobility of 0.8 cm- /V.S, the highest mobility ever reported in a NiO film to our knowledge. The carrier density of IGZO was 2.5E16 cm- ,and its mobility was 0.95 cm-2/V.S. The fabricated diode exhibited a current ratio of 175 in on and off states and a reverse breakdown voltage of 3.5 V.
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DOI:10.24200/sci.2023.57301.5166