Integration of Non‐Volatile Multi‐Bit Storage and Logic Computing in GaN Enhancement‐Mode Devices for In‐Memory Computing

Silicon‐based in‐memory computing, through seamless integration of computation and storage capabilities, offers a promising solution to the data transfer bottlenecks inherent in traditional von Neumann architectures, addressing the growing demands of big data and artificial intelligence applications...

Celý popis

Podrobná bibliografia

Vydané v:	Advanced functional materials
Hlavní autori:	Yu, Hao, Liu, Huangbai, Li, Lei, Duan, Xinqing, Peng, Zehui, Lu, Lei, Lin, Xinnan, Chang, Kuan‐Chang
Médium:	Journal Article
Jazyk:	English
Vydavateľské údaje:	28.08.2025
ISSN:	1616-301X, 1616-3028
On-line prístup:	Získať plný text
Tagy:	Pridať tag Žiadne tagy, Buďte prvý, kto otaguje tento záznam!