AlGaN/GaN-HEMTs with a breakdown voltage higher than 100 V and maximum oscillation frequency f max as high as 100 GHz - Mokerov, V. G.; Kuznetsov, A. L.; Fedorov, Yu. V.; Bugaev, A. S.; Pavlov, A. Yu; Enyushkina, E. N.; Gnatyuk, D. L.; Zuev, A. V.; Galiev, R. R.; Ovcharenko, E. N.; Sveshnikov, Yu. N.; Tsatsulnikov, A. F.; et al. (Semiconductors (Woodbury, N.Y.), 2009)