AlGaN/GaN-HEMTs with a breakdown voltage higher than 100 V and maximum oscillation frequency f max as high as 100 GHz

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Veröffentlicht in:Semiconductors (Woodbury, N.Y.) Jg. 43; H. 4; S. 537 - 543
Hauptverfasser: Mokerov, V. G., Kuznetsov, A. L., Fedorov, Yu. V., Bugaev, A. S., Pavlov, A. Yu, Enyushkina, E. N., Gnatyuk, D. L., Zuev, A. V., Galiev, R. R., Ovcharenko, E. N., Sveshnikov, Yu. N., Tsatsulnikov, A. F., Ustinov, V. M.
Format: Journal Article
Sprache:Englisch
Veröffentlicht: 01.04.2009
ISSN:1063-7826, 1090-6479
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Author Ustinov, V. M.
Ovcharenko, E. N.
Bugaev, A. S.
Kuznetsov, A. L.
Sveshnikov, Yu. N.
Gnatyuk, D. L.
Zuev, A. V.
Galiev, R. R.
Tsatsulnikov, A. F.
Enyushkina, E. N.
Mokerov, V. G.
Pavlov, A. Yu
Fedorov, Yu. V.
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  fullname: Tsatsulnikov, A. F.
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  surname: Ustinov
  fullname: Ustinov, V. M.
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Cites_doi 10.1109/LED.2003.822667
10.1109/LED.2005.860882
10.1109/TED.2007.912367
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Title AlGaN/GaN-HEMTs with a breakdown voltage higher than 100 V and maximum oscillation frequency f max as high as 100 GHz
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