AlGaN/GaN-HEMTs with a breakdown voltage higher than 100 V and maximum oscillation frequency f max as high as 100 GHz

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Published in:Semiconductors (Woodbury, N.Y.) Vol. 43; no. 4; pp. 537 - 543
Main Authors: Mokerov, V. G., Kuznetsov, A. L., Fedorov, Yu. V., Bugaev, A. S., Pavlov, A. Yu, Enyushkina, E. N., Gnatyuk, D. L., Zuev, A. V., Galiev, R. R., Ovcharenko, E. N., Sveshnikov, Yu. N., Tsatsulnikov, A. F., Ustinov, V. M.
Format: Journal Article
Language:English
Published: 01.04.2009
ISSN:1063-7826, 1090-6479
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Author Ustinov, V. M.
Ovcharenko, E. N.
Bugaev, A. S.
Kuznetsov, A. L.
Sveshnikov, Yu. N.
Gnatyuk, D. L.
Zuev, A. V.
Galiev, R. R.
Tsatsulnikov, A. F.
Enyushkina, E. N.
Mokerov, V. G.
Pavlov, A. Yu
Fedorov, Yu. V.
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Cites_doi 10.1109/LED.2003.822667
10.1109/LED.2005.860882
10.1109/TED.2007.912367
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Title AlGaN/GaN-HEMTs with a breakdown voltage higher than 100 V and maximum oscillation frequency f max as high as 100 GHz
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