Mokerov, V. G., Kuznetsov, A. L., Fedorov, Y. V., Bugaev, A. S., Pavlov, A. Y., Enyushkina, E. N., . . . Ustinov, V. M. (2009). AlGaN/GaN-HEMTs with a breakdown voltage higher than 100 V and maximum oscillation frequency f max as high as 100 GHz. Semiconductors (Woodbury, N.Y.), 43(4), 537-543. https://doi.org/10.1134/S1063782609040253
Citace podle Chicago (17th ed.)Mokerov, V. G., et al. "AlGaN/GaN-HEMTs with a Breakdown Voltage Higher than 100 V and Maximum Oscillation Frequency F Max as High as 100 GHz." Semiconductors (Woodbury, N.Y.) 43, no. 4 (2009): 537-543. https://doi.org/10.1134/S1063782609040253.
Citace podle MLA (9th ed.)Mokerov, V. G., et al. "AlGaN/GaN-HEMTs with a Breakdown Voltage Higher than 100 V and Maximum Oscillation Frequency F Max as High as 100 GHz." Semiconductors (Woodbury, N.Y.), vol. 43, no. 4, 2009, pp. 537-543, https://doi.org/10.1134/S1063782609040253.