A Parallel Programming and Emitting Scheme for High-Resolution Active-Matrix Micro-LED Displays

This article proposes a parallel programming and emitting (PPE) driving scheme for high-resolution active-matrix micro-LED (AM-<inline-formula> <tex-math notation="LaTeX">\mu </tex-math> </inline-formula>LED) displays. The PPE scheme incorporates a 1 T-1 C frame buf...

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Bibliographic Details
Published in:IEEE transactions on electron devices pp. 1 - 7
Main Authors: Zheng, Xin, Zeng, Haohang, Hu, Jiangbo, Han, Haotian, Liao, Congwei, Zhang, Shengdong
Format: Journal Article
Language:English
Published: IEEE 21.11.2025
Subjects:
Analog pulsewidth modulation (A-PWM)
Capacitors
Current measurement
high resolution
Light emitting diodes
micro-LED
parallel programming and emitting (PPE)
Personal protective equipment
pixel circuit
Pulse width modulation
Semiconductor device measurement
Thin film transistors
thin-film transistor (TFT)
Threshold voltage
Timing
Transistors
ISSN:0018-9383, 1557-9646
Online Access:Get full text
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Summary:This article proposes a parallel programming and emitting (PPE) driving scheme for high-resolution active-matrix micro-LED (AM-<inline-formula> <tex-math notation="LaTeX">\mu </tex-math> </inline-formula>LED) displays. The PPE scheme incorporates a 1 T-1 C frame buffer within each pixel, enabling grayscale data for the current frame to be programmed during the emission period of the preceding frame. Compared with the conventional sequential line-by-line programming and synchronous emission (SE), the proposed PPE scheme significantly increases the emission time per frame from less than 50% to over 90%, while also providing additional time for compensation to improve the accuracy of the driving current. To validate the feasibility of the PPE driving scheme, an analog pulsewidth modulation (A-PWM) pixel circuit was designed and fabricated using a-IGZO thin-film transistors (TFTs). The fabricated pixel circuit demonstrates a reliable PPE operation, and maintains a low driving current error rate below 2%, even under a TFT threshold voltage variation of ±3 V.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2025.3632826