First-order SPICE modeling of SiC p- and n-channel side-gate JFETs toward high-temperature complementary JFET ICs
A device model of silicon carbide (SiC) p- and n-channel junction field-effect transistors (JFETs) applicable in a high-temperature range was constructed, and the validity of the model was evaluated in Simulation Program with Integrated Circuit Emphasis (SPICE) simulations. The constructed device mo...
Saved in:
| Published in: | APL Electronic Devices Vol. 1; no. 2 |
|---|---|
| Main Authors: | , , , |
| Format: | Journal Article |
| Language: | English |
| Published: |
01.06.2025
|
| ISSN: | 2995-8423, 2995-8423 |
| Online Access: | Get full text |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Be the first to leave a comment!